TPCA8103 - описание и поиск аналогов

TPCA8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCA8103 Lithium Ion Battery Applications Unit mm Notebook PC Applications 0.4 0.1 1.27 0.05 M A Portable Equipment Applications 8 5 0.15 0.05 Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 3.1 m (typ.) 4 1 0.595 High forward transfe

TPCA8103 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS 0.004 at VGS = - 10 V - 120 COMPLIANT - 30 130 nC 100 % Rg Tested 0.006 at VGS = - 4.5 V - 100 APPLICATIONS Notebook - Load Switch S DFN5X6 Top View Top View Bottom View 1 8 G 2 7 3 6 4 5

TPCA8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCA8102 Lithium Ion Battery Applications Unit mm Notebook PC Applications 0.4 0.1 1.27 0.05 M A Portable Equipment Applications 8 5 0.15 0.05 Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 4.5m (typ.) 4 1 0.595 High forward transfer

TPCA8108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCA8108 High-Side Switching Applications Motor Drive Applications Unit mm 0.4 0.1 1.27 0.5 0.1 0.05 M A 8 5 Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 7.7 m (typ.) High forward transfer admittance Yfs = 41S (typ.) 0.15 0.05

TPCA8106 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCA8106 Lithium Ion Battery Applications Unit mm Notebook PC Applications 1.27 0.4 0.1 8 0.05 M A Portable Equipment Applications 5 0.15 0.05 Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 2.9 m (typ.) 4 0.595 1 (VGS= -10V

TPCA8109 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCA8109 Lithium Ion Battery Applications Unit mm Power Management Switch Applications 1.27 0.4 0.1 8 0.05 M A 5 Small footprint due to small and thin package 0.15 0.05 Low drain-source ON-resistance RDS (ON) = 7 m (typ.) Low leakage current IDSS = -10 A (max) (VDS = -

TPCA8104 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) TPCA8104 High-Side Switching Applications Unit mm Portable Equipment Applications 0.4 0.1 1.27 0.5 0.1 0.05 M A 8 5 Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 11 m (typ.) 0.15 0.05 High forward transfer admittance Y = 50 S (ty

TPCA8107-H TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCA8107-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications 1.27 0.4 0.1 8 0.05 M A Portable Equipment Applications 5 CCFL Inverter Applications 0.15 0.05 Small footprint due to a small and thin package High-speed switching 4 0.595

TPCA8105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCA8105 Notebook PC Applications Unit mm Portable Equipment Applications 0.4 0.1 1.27 0.5 0.1 0.05 M A 8 5 Small footprint due to compact and slim package Low drain-source ON resistance RDS (ON) = 23 m (typ.) 0.15 0.05 High forward transfer admittance Y = 14 S (typ.)