TPCC8003-H - описание и поиск аналогов

TPCC8003-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCC8003-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 4.2 nC (typ.) Low drain-source ON-resistance RDS (ON) = 14.3

TPCC8009 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS ) TPCC8009 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance RDS (ON) = 5 m (typ.) ( VGS = 10 V) Low leakage current IDSS = 10 A (max) (VDS = 30 V)

TPCC8007 MOSFETs Silicon N-channel MOS (U-MOS ) TPCC8007 TPCC8007 TPCC8007 TPCC8007 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 3.5 m (typ.) (VGS = 4.5 V) (3) Low leakage

TPCC8002-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCC8002-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 7.1 nC (typ.) Low drain-source ON-resistance RDS (ON) = 7.6

TPCC8005-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCC8005-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 9.1 nC (typ.) Low drain-source ON-resistance RDS (ON) = 5.2

TPCC8008 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS ) TPCC8008 Notebook PC Applications Unit mm Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance RDS (ON) = 4.5 m (typ.) ( VGS = 10 V) Low leakage current IDSS = 10 A (max) (VDS = 30 V) Enhancement mode Vth = 1.3 to 2.

TPCC8006-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCC8006-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 7.4 nC (typ.) Low drain-source ON-resistance RDS (ON) = 6.5

TPCC8001-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCC8001-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 7.1 nC (typ.) Low drain-source ON-resistance RDS (ON) = 7.6