Справочник MOSFET. TPCC8003-H

 

TPCC8003-H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TPCC8003-H
   Маркировка: 8003H
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 22 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 13 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 8.6 nC
   trⓘ - Время нарастания: 2.2 ns
   Cossⓘ - Выходная емкость: 220 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0169 Ohm
   Тип корпуса: TSON-ADVANCE

 Аналог (замена) для TPCC8003-H

 

 

TPCC8003-H Datasheet (PDF)

 ..1. Size:217K  toshiba
 tpcc8003-h.pdf

TPCC8003-H TPCC8003-H

TPCC8003-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCC8003-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 4.2 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 14.3

 7.1. Size:215K  toshiba
 tpcc8009.pdf

TPCC8003-H TPCC8003-H

TPCC8009 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS) TPCC8009 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 5 m (typ.) ( VGS = 10 V) Low leakage current: IDSS = 10 A (max) (VDS = 30 V)

 7.2. Size:227K  toshiba
 tpcc8007.pdf

TPCC8003-H TPCC8003-H

TPCC8007MOSFETs Silicon N-channel MOS (U-MOS)TPCC8007TPCC8007TPCC8007TPCC80071. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 3.5 m (typ.) (VGS = 4.5 V)(3) Low leakage

 7.3. Size:176K  toshiba
 tpcc8002-h.pdf

TPCC8003-H TPCC8003-H

TPCC8002-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCC8002-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 7.1 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 7.6

 7.4. Size:175K  toshiba
 tpcc8005-h.pdf

TPCC8003-H TPCC8003-H

TPCC8005-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCC8005-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 9.1 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 5.2

 7.5. Size:278K  toshiba
 tpcc8008.pdf

TPCC8003-H TPCC8003-H

TPCC8008 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS) TPCC8008 Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 4.5 m (typ.) ( VGS = 10 V) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.

 7.6. Size:190K  toshiba
 tpcc8006-h.pdf

TPCC8003-H TPCC8003-H

TPCC8006-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCC8006-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 7.4 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 6.5

 7.7. Size:176K  toshiba
 tpcc8001-h.pdf

TPCC8003-H TPCC8003-H

TPCC8001-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCC8001-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 7.1 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 7.6

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