Справочник MOSFET. TPCS8006

 

TPCS8006 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: TPCS8006
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 1.1 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 105 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1 Ohm
   Тип корпуса: TSSOP8
     - подбор MOSFET транзистора по параметрам

 

TPCS8006 Datasheet (PDF)

 ..1. Size:157K  toshiba
 tpcs8006.pdf pdf_icon

TPCS8006

TPCS8006 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) TPCS8006 High-Speed Switching Applications Unit: mmSwitching Regulator Applications DC-DC Converter Applications Low drain-source ON resistance: RDS (ON) = 0.8 (typ.) High forward transfer admittance: |Yfs| = 1.6 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 250 V)

 7.1. Size:215K  toshiba
 tpcs8008-h.pdf pdf_icon

TPCS8006

TPCS8008-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH-MOS) TPCS8008-H High-Speed Switching Applications Unit: mmSwitching Regulator Applications DC/DC Converter Applications Low drain-source ON-resistance: RDS (ON) = 0.48 (typ.) High forward transfer admittance: |Yfs| = 1.8 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS =

 7.2. Size:235K  toshiba
 tpcs8007-h.pdf pdf_icon

TPCS8006

TPCS8007-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH-MOS) TPCS8007-H High-Speed Switching Applications Unit: mmSwitching Regulator Applications DC/DC Converter Applications Low drain-source ON-resistance: RDS (ON) = 0.36 (typ.) High forward transfer admittance: |Yfs| = 2.1 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS =

 7.3. Size:235K  toshiba
 tpcs8009-h.pdf pdf_icon

TPCS8006

TPCS8009-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH-MOS) TPCS8009-H High-Speed Switching Applications Unit: mmSwitching Regulator Applications DC/DC Converter Applications Low drain-source ON-resistance: RDS (ON) = 0.27 (typ.) High forward transfer admittance: |Yfs| = 2.1 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS =

ПОКАЗАТЬ ЕЩЁ

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History: SIHW73N60E | STW12NM60N | APT6070AN | CS7N70A4R-G | IPN80R1K2P7 | NCEP01T11 | AS2307

 

 
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