Philips Semiconductors Product specification TrenchMOS transistor BUK9524-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 45 Alow on-state resist

BUK9524-55A; BUK9624-55ATrenchMOS logic level FETRev. 01 29 September 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9524-55A in SOT78 (TO-220AB)BUK9624-55A in SOT404 (D 2-PAK).2. Features TrenchMOS tech

Philips Semiconductors Product specification TrenchMOS transistor BUK9520-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 52 Alow on-state resist

BUK9520-100BN-channel TrenchMOS logic level FETRev. 01 6 May 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

BUK9523-75A; BUK9623-75ATrenchMOS logic level FETRev. 01 10 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9523-75A in SOT78 (TO-220AB)BUK9623-75A in SOT404 (D 2-PAK).2. Features TrenchMOS techno

BUK9520-100A;BUK9620-100ATrenchMOS logic level FETRev. 01 7 February 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9520-100A in SOT78 (TO-220AB)BUK9620-100A in SOT404 (D 2-PAK).2. Features TrenchMOS t

BUK95/962R8-30BTrenchMOS logic level FETRev. 02 14 October 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.Product availability:BUK952R8-30B in SOT78 (TO-220AB)BUK962R8-30B in SOT404 (D2-PAK).1.2 Features Very low on-state

BUK95/9629-100BTrenchMOS logic level FETRev. 01 18 April 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.Product availability:BUK9529-100B in SOT78 (TO-220AB)BUK9629-100B in SOT404 (D2-PAK).1.2 Features Very low on-st

Philips Semiconductors Product specification TrenchMOS transistor BUK9528-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 40 Alow on-state resist

Philips Semiconductors Product specification TrenchMOS transistor BUK9528-100A Logic level FET BUK9628-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 100 VTO220AB and SOT404 . Using ID Drain current (DC) 49 Atrench techn

BUK9528-55A; BUK9628-55ATrenchMOS logic level FETRev. 01 18 January 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9528-55A in SOT78 (TO-220AB)BUK9628-55A in SOT404 (D 2-PAK).2. Features TrenchMOS techno

BUK952R8-60EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive

BUK952R3-40EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive