SSM3K15TE - описание и поиск аналогов

www.DataSheet4U.com SSM3K15TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15TE High Speed Switching Applications Unit mm Analog Switch Applications 1.2 0.05 0.8 0.05 Small package Low on resistance Ron = 4.0 (max) (@VGS = 4 V) Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symb

SSM3K15ACT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15ACT Load Switching Applications Unit mm 2.5 V drive Low ON-resistance RDS(ON) = 3.6 (max) (@VGS = 4 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS 2

SSM3K15FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FU High Speed Switching Applications Analog Switch Applications Unit mm Small package Low on resistance Ron = 4.0 (max) (@VGS = 4 V) Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDS 30 V Gate-sour

SSM3K15F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15F High Speed Switching Applications Unit mm Analog Switch Applications +0.5 2.5-0.3 +0.25 Small package 1.5-0.15 Low on resistance Ron = 4.0 (max) (@VGS = 4 V) 1 Ron = 7.0 (max) (@VGS = 2.5 V) 2 3 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drai

SSM3K15FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FS High Speed Switching Applications Unit mm Analog Switching Applications Compact package suitable for high-density mounting Low ON-resistance Ron = 4.0 (max) (@VGS = 4 V) Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Dr

SSM3K15FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FV High Speed Switching Applications Analog Switch Applications Unit mm 1.2 0.05 Optimum for high-density mounting in small packages 0.8 0.05 Low on-resistance RDS(ON) = 4.0 (max) (@VGS = 4 V) RDS(ON) = 7.0 (max) (@VGS = 2.5 V) 1 Absolute Maximum Ratings (Ta = 25 C) 3 Char

SSM3K15CT TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K15CT High-Speed Switching Applications Unit mm Analog Switch Applications 0.6 0.05 Optimum for high-density mounting in small packages 0.5 0.03 Low ON-resistance Ron = 4.0 (max) (@VGS = 4 V) Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25 C) Ch

SSM3K15AMFV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15AMFV Load Switching Applications Unit mm 2.5 V drive Low ON-resistance RDS(ON) = 3.6 (max) (@VGS = 4 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) 1.2 0.05 0.8 0.05 Absolute Maximum Ratings (Ta = 25 C) 1 Characteristics Symbol Rating Unit 3 Drain-Source voltage VDSS 30 V

SSM3K15FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FS High Speed Switching Applications Unit mm Analog Switching Applications Compact package suitable for high-density mounting Low ON-resistance R = 4.0 (max) (@V = 4 V) on GS R = 7.0 (max) (@V = 2.5 V) on GS Maximum Ratings (Ta = = 25 C) = = Characteristic Symbol Rating Uni

SSM3K15AFS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15AFS Load Switching Applications Unit mm 2.5 V drive Low ON-resistance RDS(ON) = 3.6 (max) (@VGS = 4 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS 2

SSM3K15AFU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15AFU Load Switching Applications Unit mm 2.5 V drive Low ON-resistance RDS(ON) = 3.6 (max) (@VGS = 4 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS 2