SSM3K311T - аналоги, параметры транзистора - Справочник транзисторов

SSM3K311T даташит

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SSM3K311T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K311T High-Speed Switching Applications Unit mm 4 V drive Low ON-resistance Ron = 43m (max) (@VGS = 4V) +0.2 2.8-0.3 Ron = 32m (max) (@VGS = 10V) +0.2 1.6-0.1 Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Drain source voltage VDS 30 V Gat

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SSM3K315T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS ) SSM3K315T High-Speed Switching Applications Unit mm 4.5-V drive +0.2 Low ON-resistance Ron = 41.5 m (max) (@VGS = 4.5 V) 2.8-0.3 Ron = 27.6 m (max) (@VGS = 10 V) +0.2 1.6-0.1 Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Drain-Source

7.2. Size:188K toshiba
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SSM3K310T TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K310T High-Speed Switching Applications 1.5 V drive Unit mm Low ON-resistance Ron = 66 m (max) (@VGS = 1.5 V) +0.2 2.8-0.3 Ron = 43 m (max) (@VGS = 1.8 V) +0.2 Ron = 32 m (max) (@VGS = 2.5 V) 1.6-0.1 Ron = 28 m (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25 C)

7.3. Size:212K toshiba
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SSM3K318T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS ) SSM3K318T Load Switching Applications High-Speed Switching Applications Unit mm +0.2 4.5 V drive 2.8-0.3 Low ON-resistance RDS(ON) = 145 m (max) (@VGS = 4.5 V) +0.2 1.6-0.1 RDS(ON) = 107 m (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25 C) Characteristic Sy