SSM6J215FE - аналоги, параметры транзистора - Справочник транзисторов

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SSM6J215FE MOSFETs Silicon P-Channel MOS (U-MOS ) SSM6J215FE SSM6J215FE SSM6J215FE SSM6J215FE 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 154 m (max) (@VGS = -1.5 V) RDS(ON) = 104 m (max) (@VGS =

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SSM6J213FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM6J213FE Power Management Switch Applications Unit mm 1.5-V drive Low ON-resistance RDS(ON) = 250 m (max) (@VGS = -1.5 V) RDS(ON) = 178 m (max) (@VGS = -1.8 V) RDS(ON) = 133 m (max) (@VGS = -2.5 V) RDS(ON) = 103 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25

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SSM6J21TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) SSM6J21TU High Current Switching Applications Unit mm Suitable for high-density mounting due to compact package Low on resistance Ron = 88 m (max) (@VGS = -2.5 V) Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -12 V Gate-Source voltage VGSS 12

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SSM6J216FE MOSFETs Silicon P-Channel MOS (U-MOS ) SSM6J216FE SSM6J216FE SSM6J216FE SSM6J216FE 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 88.1 m (max) (@VGS = -1.5 V) RDS(ON) = 56.0 m (max) (@VGS