Справочник MOSFET. 2SJ103

 

2SJ103 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SJ103
   Тип транзистора: JFET
   Полярность: P
   Максимальная рассеиваемая мощность (Pd): 0.3 W
   Предельно допустимое напряжение сток-исток |Uds|: 50 V
   Максимально допустимый постоянный ток стока |Id|: 0.014 A
   Максимальная температура канала (Tj): 125 °C
   Сопротивление сток-исток открытого транзистора (Rds): 270 Ohm
   Тип корпуса: TO92

 Аналог (замена) для 2SJ103

 

 

2SJ103 Datasheet (PDF)

 ..1. Size:282K  toshiba
2sj103.pdf

2SJ103
2SJ103

2SJ103 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ103 For Audio Amplifier, Analog Switch, Constant Current Unit: mm and Impedance Converter Applications High breakdown voltage: VGDS = 50 V High input impedance: I = 1.0 nA (max) (V = 30 V) GSS GS Low R : R = 270 (typ.) (I = -5 mA) DS (ON) DS (ON) DSS Complimentary to 2SK246 Maxim

 9.1. Size:283K  toshiba
2sj106.pdf

2SJ103
2SJ103

2SJ106 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ106 Audio Frequency Amplifier Applications Unit: mm Analog Switch Applications Constant Current Applications Impedance Converter Applications High breakdown voltage: VGDS = 50 V High input impedance: I = 1.0 nA (max) (V = 30 V) GSS GS Low R : R = 270 (typ.) (I = -5 mA) DS (ON) DS (O

 9.2. Size:339K  toshiba
2sj108.pdf

2SJ103
2SJ103

2SJ108 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 Low Noise Audio Amplifier Applications Unit: mm Recommended for first stages of EQ amplifiers and MC head amplifiers. High |Y |: |Y | = 22 mS (typ.) fs fs(V = -10 V, V = 0, I = -3 mA) DS GS DSS Low noise: En = 0.95 nV/Hz1/2 (typ.) (V = -10 V, I = -1 mA, f = 1 kHz) DS D High i

 9.3. Size:382K  toshiba
2sj104.pdf

2SJ103
2SJ103

2SJ104 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ104 For Audio Amplifier, Analog Switch, Constant Current Unit: mm and Impedance Converter Applications High input impedance: IGSS = 1.0 nA (max) (V = 25 V) GS Low R = 40 (typ.) (I = -5 mA) DS (ON) DSS Complimentary to 2SK364 Maximum Ratings (Ta == 25C) ==Characteristics Symbo

 9.4. Size:242K  toshiba
2sj109.pdf

2SJ103
2SJ103

 9.5. Size:286K  toshiba
2sj105.pdf

2SJ103
2SJ103

2SJ105 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ105 For Audio Amplifier, Analog Switch, Constant Current Unit: mm and Impedance Converter Applications High breakdown voltage: VGDS = 50 V High input impedance: I = 1.0 nA (max) (V = 30 V) GSS GS Low R : R = 270 (typ.) (I = -5 mA) DS (ON) DS (ON) DSS Complimentary to 2SK330 S

 9.6. Size:321K  toshiba
2sj107.pdf

2SJ103
2SJ103

2SJ107 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ107 For Audio Amplifier, Analog Switch, Constant Current Unit: mm and Impedance Converter Applications High input impedance: IGSS = 1.0 nA (max) (V = 25 V) GS Low R : R = 40 (typ.) DS (ON) DS (ON) Small package Complementary to 2SK366 Maximum Ratings (Ta == 25C) ==Chara

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top