Справочник MOSFET. 2SK184

 

2SK184 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK184
   Тип транзистора: JFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 0.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.014 A
   Tjⓘ - Максимальная температура канала: 125 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 250 Ohm
   Тип корпуса: MINI

 Аналог (замена) для 2SK184

 

 

2SK184 Datasheet (PDF)

 ..1. Size:306K  toshiba
 2sk184.pdf

2SK184 2SK184

2SK184 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK184 Low Noise Audio Amplifier Applications Unit: mm High |Yfs|: |Y | = 15 mS (typ.) (V = 10 V, V = 0) fs DS GS High breakdown voltage: V = -50 V GDS Low noise: NF = 1.0dB (typ.) (V = 10 V, I = 0.5 mA, f = 1 kHz, R = 1 k) DS D G High input impedance: I = -1 nA (max) (V = -30 V) GS

 0.1. Size:102K  sanyo
 2sk1848.pdf

2SK184 2SK184

Ordering number:EN4500N-Channel Silicon MOSFET2SK1848Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2091A Low-voltage drive.[2SK1848]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Source3 : DrainSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter S

 0.2. Size:74K  sanyo
 2sk1847.pdf

2SK184 2SK184

Ordering number:EN4505N-Channel Silicon MOSFET2SK1847Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2091A Low-voltage drive.[2SK1847]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Source3 : DrainSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter S

 0.3. Size:87K  sanyo
 2sk1840.pdf

2SK184 2SK184

Ordering number:EN4635N-Channel Enhancement Silicon MOSFET2SK1840Analog Switch ApplicationsFeatures Package Dimensions Large yfs.unit:mm Enhancement type.2024B Low ON resistance.[2SK1840]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Drain3 : SourceSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Condi

 0.4. Size:90K  sanyo
 2sk1841.pdf

2SK184 2SK184

Ordering number:EN4636N-Channel Enhancement Silicon MOSFET2SK1841Ultrahigh-Speed Switching,Analog Switch ApplicationsFeatures Package Dimensions Large yfs.unit:mm Enhancement type.2040A Low ON resistance.[2SK1841]2.24.00.40.50.40.41 2 31 : Drain1.3 1.32 : Source3 : Gate3.0SANYO : SPA3.8nomSpecificationsAbsolute Maximum Ratings

 0.5. Size:100K  sanyo
 2sk1849.pdf

2SK184 2SK184

Ordering number:EN4501N-Channel Silicon MOSFET2SK1849Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2091A Low-voltage drive.[2SK1849]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Source3 : DrainSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter S

 0.6. Size:30K  panasonic
 2sk1842.pdf

2SK184 2SK184

Silicon Junction FETs (Small Signal) 2SK18422SK1842Silicon N-Channel JunctionUnit : mmFor impedance conversion in low frequency+0.22.8 0.3For infrared sensor +0.250.65 0.15 1.5 0.05 0.65 0.15 Features1 Low gate-source leakage current, IGSS Small capacitance of Ciss, Coss, Crss3 Downsizing of sets by mini-type package and automatic insertion by2taping/ma

 0.7. Size:34K  panasonic
 2sk1846.pdf

2SK184 2SK184

Power F-MOS FETs 2SK18462SK1846Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 20mJ3.4 0.38.5 0.26.0 0.5 1.0 0.1VGSS=30V guaranteedHigh-speed switching : tf= 35nsNo secondary breakdown1.5max. 1.1max. FeaturesNon-contact relay0.8 0.1 0.5max.Solenoid drive2.54 0.3Motor drive5.08 0.5Control equipm

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