2SK184 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK184 Low Noise Audio Amplifier Applications Unit: mm High |Yfs|: |Y | = 15 mS (typ.) (V = 10 V, V = 0) fs DS GS High breakdown voltage: V = -50 V GDS Low noise: NF = 1.0dB (typ.) (V = 10 V, I = 0.5 mA, f = 1 kHz, R = 1 k) DS D G High input impedance: I = -1 nA (max) (V = -30 V) GS

Ordering number:EN4500N-Channel Silicon MOSFET2SK1848Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2091A Low-voltage drive.[2SK1848]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Source3 : DrainSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter S

Ordering number:EN4505N-Channel Silicon MOSFET2SK1847Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2091A Low-voltage drive.[2SK1847]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Source3 : DrainSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter S

Ordering number:EN4635N-Channel Enhancement Silicon MOSFET2SK1840Analog Switch ApplicationsFeatures Package Dimensions Large yfs.unit:mm Enhancement type.2024B Low ON resistance.[2SK1840]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Drain3 : SourceSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Condi

Ordering number:EN4636N-Channel Enhancement Silicon MOSFET2SK1841Ultrahigh-Speed Switching,Analog Switch ApplicationsFeatures Package Dimensions Large yfs.unit:mm Enhancement type.2040A Low ON resistance.[2SK1841]2.24.00.40.50.40.41 2 31 : Drain1.3 1.32 : Source3 : Gate3.0SANYO : SPA3.8nomSpecificationsAbsolute Maximum Ratings

Ordering number:EN4501N-Channel Silicon MOSFET2SK1849Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2091A Low-voltage drive.[2SK1849]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Source3 : DrainSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter S

Silicon Junction FETs (Small Signal) 2SK18422SK1842Silicon N-Channel JunctionUnit : mmFor impedance conversion in low frequency+0.22.8 0.3For infrared sensor +0.250.65 0.15 1.5 0.05 0.65 0.15 Features1 Low gate-source leakage current, IGSS Small capacitance of Ciss, Coss, Crss3 Downsizing of sets by mini-type package and automatic insertion by2taping/ma

Power F-MOS FETs 2SK18462SK1846Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 20mJ3.4 0.38.5 0.26.0 0.5 1.0 0.1VGSS=30V guaranteedHigh-speed switching : tf= 35nsNo secondary breakdown1.5max. 1.1max. FeaturesNon-contact relay0.8 0.1 0.5max.Solenoid drive2.54 0.3Motor drive5.08 0.5Control equipm