2SK184 - описание и поиск аналогов

2SK184 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK184 Low Noise Audio Amplifier Applications Unit mm High Yfs Y = 15 mS (typ.) (V = 10 V, V = 0) fs DS GS High breakdown voltage V = -50 V GDS Low noise NF = 1.0dB (typ.) (V = 10 V, I = 0.5 mA, f = 1 kHz, R = 1 k ) DS D G High input impedance I = -1 nA (max) (V = -30 V) GS

Ordering number EN4500 N-Channel Silicon MOSFET 2SK1848 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2091A Low-voltage drive. [2SK1848] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 Gate 2 Source 3 Drain SANYO CP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter S

Ordering number EN4505 N-Channel Silicon MOSFET 2SK1847 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2091A Low-voltage drive. [2SK1847] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 Gate 2 Source 3 Drain SANYO CP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter S

Ordering number EN4635 N-Channel Enhancement Silicon MOSFET 2SK1840 Analog Switch Applications Features Package Dimensions Large yfs . unit mm Enhancement type. 2024B Low ON resistance. [2SK1840] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 Gate 2 Drain 3 Source SANYO CP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Condi

Ordering number EN4636 N-Channel Enhancement Silicon MOSFET 2SK1841 Ultrahigh-Speed Switching, Analog Switch Applications Features Package Dimensions Large yfs . unit mm Enhancement type. 2040A Low ON resistance. [2SK1841] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1 Drain 1.3 1.3 2 Source 3 Gate 3.0 SANYO SPA 3.8nom Specifications Absolute Maximum Ratings

Ordering number EN4501 N-Channel Silicon MOSFET 2SK1849 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2091A Low-voltage drive. [2SK1849] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 Gate 2 Source 3 Drain SANYO CP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter S

Silicon Junction FETs (Small Signal) 2SK1842 2SK1842 Silicon N-Channel Junction Unit mm For impedance conversion in low frequency +0.2 2.8 0.3 For infrared sensor +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features 1 Low gate-source leakage current, IGSS Small capacitance of Ciss, Coss, Crss 3 Downsizing of sets by mini-type package and automatic insertion by 2 taping/ma

Power F-MOS FETs 2SK1846 2SK1846 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed EAS > 20mJ 3.4 0.3 8.5 0.2 6.0 0.5 1.0 0.1 VGSS= 30V guaranteed High-speed switching tf= 35ns No secondary breakdown 1.5max. 1.1max. Features Non-contact relay 0.8 0.1 0.5max. Solenoid drive 2.54 0.3 Motor drive 5.08 0.5 Control equipm