BUK9608-55 - описание и поиск аналогов

Philips Semiconductors Product specification TrenchMOS transistor BUK9608-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting Using trench technology ID Drain current (DC) 75 A the device feat

BUK95/9608-55A TrenchMOS logic level FET Rev. 03 6 May 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9508-55A in SOT78 (TO-220AB) BUK9608-55A in SOT404 (D2-PAK). 2. Features TrenchMOS technology Q101 compliant 1

Philips Semiconductors Product specification TrenchMOS transistor BUK9508-55A Logic level FET BUK9608-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A trench technolo

BUK9608-55A N-channel TrenchMOS logic level FET Rev. 04 31 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featu

BUK9608-55B N-channel TrenchMOS logic level FET Rev. 04 4 May 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features a