BUK9610-30 - аналоги, даташиты, параметры транзистора

BUK9610-30 Datasheet (PDF)

..1. Size:52K philips
buk9610-30 1.pdf pdf_icon

Philips Semiconductors Product specification TrenchMOS transistor BUK9610-30 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 30 Vmounting using trench technology. ID Drain current (DC) 75 AThedevice feat

6.1. Size:327K philips
buk9510-55a buk9610-55a.pdf pdf_icon

BUK9510-55A; BUK9610-55ATrenchMOS logic level FETRev. 01 20 August 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK9510-55A in SOT78 (TO-220AB)2BUK9610-55A in SOT404 (D -PAK).2. Features TrenchMOS technology

6.2. Size:342K philips
buk9510-100b buk9610-100b.pdf pdf_icon

BUK95/9610-100BTrenchMOS logic level FETRev. 02 8 October 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.Product availability:BUK9510-100B in SOT78 (TO-220AB)BUK9610-100B in SOT404 (D2-PAK).1.2 Features Very low on-state r

6.3. Size:832K nxp
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BUK9610-100BN-channel TrenchMOS logic level FETRev. 03 31 January 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Feat

Другие MOSFET... BUK9518-30 , BUK9518-55 , BUK9520-55 , BUK9524-55 , BUK9528-55 , BUK9535-55 , BUK9606-30 , BUK9608-55 , NCEP15T14 , BUK9614-30 , BUK9614-55 , BUK9618-30 , BUK9618-55 , BUK9620-55 , BUK9624-55 , BUK9628-55 , BUK9635-55 .