2SJ186 - Даташиты. Аналоги. Основные параметры

2SJ186 Silicon P Channel MOS FET REJ03G0849-0200 (Previous ADE-208-1184) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code PLZZ0004CA-A R (Package name UPAK ) D 1 2

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Ordering number EN3761A P-Channel Silicon MOSFET 2SJ188 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SJ188] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 1 Gate 0.6 0.5 2 Drain 1 2 3 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SJ188] 6.5 2.3 5.0 0.5

Ordering number EN3762A P-Channel Silicon MOSFET 2SJ189 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SJ189] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 1 Gate 0.6 0.5 2 Drain 1 2 3 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SJ189] 6.5 2.3 5.0 0.5

Ordering number EN3509A P-Channel Silicon MOSFET 2SJ187 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SJ187] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate 0.75 2 Drain 3 Source SANYO PCP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter

Preliminary Datasheet R07DS0395EJ0300 2SJ181(L), 2SJ181(S) (Previous REJ03G0848-0200) Rev.3.00 Silicon P Channel MOS FET May 16, 2011 Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PR

2SJ181(L), 2SJ181(S) Silicon P Channel MOS FET REJ03G0848-0200 (Previous ADE-208-1183) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0004ZD-A RENESAS Packa

SMD Type MOSFET P-Channel MOSFET 2SJ181S TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features 4 VDS (V) =-600V ID =-0.5 A (VGS =-10V) 0.127 +0.1 0.80-0.1 max RDS(ON) 25 (VGS =-10V) D High speed switching G Low drive current + 0.1 1 Gate 2.3 0.60- 0.1 +0.15 2 Drain 4 .60 -0.15 3 Source 4 Drain S

SMD Type MOSFET P-Channel MOSFET 2SJ185 SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-50V ID =-0.1 A (VGS =-4V) 1 2 +0.02 +0.1 RDS(ON) 20 (VGS =-4V) 0.15 -0.02 0.95 -0.1 +0.1 1.9-0.2 RDS(ON) 40 (VGS =-2.5V) Comp;ementary to 2SK1399 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter S

SMD Type MOSFET P-Channel MOSFET 2SJ185 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) =-50V 1 2 ID =-0.1 A (VGS =-4V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 RDS(ON) 20 (VGS =-4V) +0.1 1.9 -0.1 RDS(ON) 40 (VGS =-2.5V) Comp;ementary to 2SK1399 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symb

2SJ182S www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Symbo