Справочник MOSFET. 2SJ186

 

2SJ186 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2SJ186

Маркировка: CY

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 1 W

Предельно допустимое напряжение сток-исток |Uds|: 200 V

Предельно допустимое напряжение затвор-исток |Ugs|: 15 V

Максимально допустимый постоянный ток стока |Id|: 0.5 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 6 ns

Выходная емкость (Cd): 32 pf

Сопротивление сток-исток открытого транзистора (Rds): 12 Ohm

Тип корпуса: UPAK

Аналог (замена) для 2SJ186

 

 

2SJ186 Datasheet (PDF)

0.1. rej03g0849 2sj186ds.pdf Size:89K _renesas

2SJ186
2SJ186

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

0.2. 2sj186.pdf Size:84K _renesas

2SJ186
2SJ186

2SJ186 Silicon P Channel MOS FET REJ03G0849-0200 (Previous: ADE-208-1184) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code: PLZZ0004CA-AR(Package name: UPAK )D12

 9.1. 2sj188.pdf Size:82K _sanyo

2SJ186
2SJ186

Ordering number:EN3761AP-Channel Silicon MOSFET2SJ188Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SJ188]6.52.35.00.540.850.71.21 : Gate0.60.52 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SJ188]6.5 2.35.0 0.5

9.2. 2sj187.pdf Size:99K _sanyo

2SJ186
2SJ186

Ordering number:EN3509AP-Channel Silicon MOSFET2SJ187Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A Low-voltage drive.[2SJ187]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter

 9.3. 2sj189.pdf Size:83K _sanyo

2SJ186
2SJ186

Ordering number:EN3762AP-Channel Silicon MOSFET2SJ189Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SJ189]6.52.35.00.540.850.71.21 : Gate0.60.52 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SJ189]6.5 2.35.0 0.5

9.4. 2sj181.pdf Size:87K _renesas

2SJ186
2SJ186

2SJ181(L), 2SJ181(S) Silicon P Channel MOS FET REJ03G0848-0200 (Previous: ADE-208-1183) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZD-A RENESAS Packa

 9.5. r07ds0395ej 2sj181ls.pdf Size:103K _renesas

2SJ186
2SJ186

Preliminary Datasheet R07DS0395EJ03002SJ181(L), 2SJ181(S) (Previous: REJ03G0848-0200)Rev.3.00Silicon P Channel MOS FET May 16, 2011Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PR

9.6. 2sj184.pdf Size:394K _nec

2SJ186
2SJ186

9.7. 2sj185.pdf Size:401K _nec

2SJ186
2SJ186

9.8. 2sj180.pdf Size:373K _nec

2SJ186
2SJ186

9.9. 2sj182l-s.pdf Size:53K _hitachi

2SJ186

9.10. 2sj183.pdf Size:118K _no

2SJ186
2SJ186

9.11. 2sj185.pdf Size:1252K _kexin

2SJ186
2SJ186

SMD Type MOSFETP-Channel MOSFET2SJ185SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features VDS (V) =-50V1 2 ID =-0.1 A (VGS =-4V)+0.1+0.050.95 -0.1 0.1 -0.01 RDS(ON) 20 (VGS =-4V) +0.11.9 -0.1 RDS(ON) 40 (VGS =-2.5V) Comp;ementary to 2SK13991. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symb

9.12. 2sj181s.pdf Size:1211K _kexin

2SJ186
2SJ186

SMD Type MOSFETP-Channel MOSFET2SJ181STO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features4 VDS (V) =-600V ID =-0.5 A (VGS =-10V)0.127+0.10.80-0.1max RDS(ON) 25 (VGS =-10V)D High speed switchingG Low drive current+ 0.11 Gate2.3 0.60- 0.1+0.152 Drain4 .60 -0.153 Source4 DrainS

9.13. 2sj185-3.pdf Size:1268K _kexin

2SJ186
2SJ186

SMD Type MOSFETP-Channel MOSFET2SJ185SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) =-50V ID =-0.1 A (VGS =-4V)1 2+0.02+0.1 RDS(ON) 20 (VGS =-4V) 0.15 -0.020.95 -0.1+0.11.9-0.2 RDS(ON) 40 (VGS =-2.5V) Comp;ementary to 2SK13991. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter S

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