Справочник MOSFET. BUK9618-55

 

BUK9618-55 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BUK9618-55
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 25 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.018 Ohm
   Тип корпуса: SOT404

 Аналог (замена) для BUK9618-55

 

 

BUK9618-55 Datasheet (PDF)

 ..1. Size:55K  philips
 buk9618-55 1.pdf

BUK9618-55 BUK9618-55

Philips Semiconductors Product specification TrenchMOS transistor BUK9618-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current (DC) 57 Athe device fea

 0.1. Size:333K  philips
 buk9518-55a buk9618-55a.pdf

BUK9618-55 BUK9618-55

BUK9518-55A; BUK9618-55ATrenchMOS logic level FETRev. 01 27 August 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9518-55A in SOT78 (TO-220AB)2BUK9618-55A in SOT404 (D -PAK).2. Features TrenchMOS technology Q

 6.1. Size:50K  philips
 buk9618-30 1.pdf

BUK9618-55 BUK9618-55

Philips Semiconductors Product specification TrenchMOS transistor BUK9618-30 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 30 Vmounting using trench technology. ID Drain current (DC) 55 AThedevice feat

 7.1. Size:68K  philips
 buk95180-100a buk96180-100a.pdf

BUK9618-55 BUK9618-55

Philips Semiconductors Product specification TrenchMOS transistor BUK95180-100A Logic level FET BUK96180-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 100 VTO220AB and SOT404 . Using ID Drain current (DC) 11 Atrench tec

 7.2. Size:770K  nxp
 buk96180-100a.pdf

BUK9618-55 BUK9618-55

BUK96180-100AN-channel TrenchMOS logic level FETRev. 02 26 April 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Featu

Другие MOSFET... BUK9528-55 , BUK9535-55 , BUK9606-30 , BUK9608-55 , BUK9610-30 , BUK9614-30 , BUK9614-55 , BUK9618-30 , 60N06 , BUK9620-55 , BUK9624-55 , BUK9628-55 , BUK9635-55 , BUK9675-55 , BUK9775-55 , BUK98150-55 , BUK9830-30 .

 

 
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