2SK1254L - описание и поиск аналогов

isc N-Channel MOSFET Transistor 2SK1254L FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage- V = 120V(Min) DSS Static Drain-Source On-Resistance R = 400m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1254(L), 2SK1254(S) Silicon N Channel MOS FET REJ03G0917-0200 (Previous ADE-208-1255) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Packa

isc N-Channel MOSFET Transistor 2SK1254S FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage- V = 120V(Min) DSS Static Drain-Source On-Resistance R = 400m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.