Справочник MOSFET. 2SK1298

 

2SK1298 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK1298
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 40 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 170 ns
   Cossⓘ - Выходная емкость: 1850 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.018 Ohm
   Тип корпуса: TO3PFM

 Аналог (замена) для 2SK1298

 

 

2SK1298 Datasheet (PDF)

 ..1. Size:48K  hitachi
2sk1298.pdf

2SK1298 2SK1298

2SK1298Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid driveOutlineTO-3PFMDG1231. Gate2. Drain3. SourceS2SK1298Absolute Maximum Rat

 ..2. Size:265K  inchange semiconductor
2sk1298.pdf

2SK1298 2SK1298

isc N-Channel MOSFET Transistor 2SK1298FEATURESDrain Current I = 40A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 18m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.AB

 0.1. Size:96K  renesas
rej03g0918 2sk1298ds.pdf

2SK1298 2SK1298

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:369K  nec
2sk1293.pdf

2SK1298 2SK1298

 8.2. Size:387K  nec
2sk1290.pdf

2SK1298 2SK1298

 8.3. Size:362K  nec
2sk1295.pdf

2SK1298 2SK1298

 8.4. Size:374K  nec
2sk1294.pdf

2SK1298 2SK1298

 8.5. Size:374K  nec
2sk1292.pdf

2SK1298 2SK1298

 8.6. Size:52K  hitachi
2sk1297.pdf

2SK1298 2SK1298

2SK1297Silicon N-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid driveOutlineTO-3PD1G231. Gate 2. Drain (Flange) S3. Source2SK1297Absolute Max

 8.7. Size:38K  hitachi
2sk1296.pdf

2SK1298 2SK1298

2SK1296Silicon N-Channel MOS FETApplicationTO220ABHigh speed power switchingFeatures Low on-resistance2 High speed switching123 Low drive current 4 V gate drive device1. Gate Can be driven from 5 V source12. Drain Suitable for motor drive, DC-DC converter,(Flange)power switch and solenoid drive3. Source3Table 1 Absolute Maximum

 8.8. Size:48K  hitachi
2sk1299.pdf

2SK1298 2SK1298

2SK1299(L), 2SK1299(S)Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid driveOutlineDPAK-144123123D1. GateG2. Drain3. Source4. D

 8.9. Size:258K  inchange semiconductor
2sk1297.pdf

2SK1298 2SK1298

isc N-Channel MOSFET Transistor 2SK1297FEATURESDrain Current I = 40A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 18m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switch andsolenoid driveABS

 8.10. Size:261K  inchange semiconductor
2sk1296.pdf

2SK1298 2SK1298

isc N-Channel MOSFET Transistor 2SK1296FEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 8.11. Size:265K  inchange semiconductor
2sk1299s.pdf

2SK1298 2SK1298

isc N-Channel MOSFET Transistor 2SK1299SFEATURESDrain Current I = 3.0A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 350m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

 8.12. Size:274K  inchange semiconductor
2sk1299l.pdf

2SK1298 2SK1298

isc N-Channel MOSFET Transistor 2SK1299LFEATURESDrain Current I = 3.0A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 350m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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