2SK1339 - описание и поиск аналогов

2SK1339 Silicon N Channel MOS FET REJ03G0936-0200 (Previous ADE-208-1276) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D

isc N-Channel MOSFET Transistor 2SK1339 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dra

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Ordering number EN3137 N-Channel Junction Silicon FET 2SK1332 Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Ideal for use in variable resistors, analog switches, unit mm low-frequency amplifiers, and constant-current 2058 circuits. [2SK1332] 0.3 Features 0.15 3 Ultrasmall-sized package permitting 2SK1332- 0 to 0.1 applied sets to

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1337 Silicon N Channel MOS FET REJ03G0934-0200 (Previous ADE-208-1274) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENE

2SK1334 Silicon N Channel MOS FET REJ03G0932-0200 (Previous ADE-208-1271) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary Breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PLZZ0004CA-A (Package name UPAK R )

2SK1336 Silicon N Channel MOS FET REJ03G0933-0200 (Previous ADE-208-1273) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1338 Silicon N Channel MOS FET REJ03G0935-0200 (Previous ADE-208-1275) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB)

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INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1330A DESCRIPTION Drain Current ID=8A@ TC=25 Drain Source Voltage- VDSS=900V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER Drain-Source Voltage (VGS=0) 900 V DSS VGS Gate-Source Voltag

isc N-Channel MOSFET Transistor 2SK1331 DESCRIPTION Drain Current I =15A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT Drain-Source Voltage (V =0) 50

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1330 DESCRIPTION Drain Current ID=8A@ TC=25 Drain Source Voltage- VDSS=800V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER Drain-Source Voltage (VGS=0) 800 V DSS VGS Gate-Source Voltage

isc N-Channel MOSFET Transistor 2SK1333 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 400m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor 2SK1338 DESCRIPTION Drain Current I =2A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and rela