Справочник MOSFET. 2SK1671

 

2SK1671 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK1671
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 170 ns
   Cossⓘ - Выходная емкость: 1250 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.095 Ohm
   Тип корпуса: TO3P

 Аналог (замена) для 2SK1671

 

 

2SK1671 Datasheet (PDF)

 ..1. Size:83K  renesas
 2sk1671.pdf

2SK1671 2SK1671

2SK1671 Silicon N Channel MOS FET REJ03G0967-0200 (Previous: ADE-208-1312) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor drive Outline RENESAS Package code: PRSS0004ZE-A(Package nam

 0.1. Size:96K  renesas
 rej03g0967 2sk1671ds.pdf

2SK1671 2SK1671

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:215K  inchange semiconductor
 2sk1679.pdf

2SK1671 2SK1671

isc N-Channel MOSFET Transistor 2SK1679DESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh Current, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VDSS GS

 8.2. Size:216K  inchange semiconductor
 2sk1677.pdf

2SK1671 2SK1671

isc N-Channel MOSFET Transistor 2SK1677DESCRIPTIONDrain Current I =16A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh Current, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VDSS GS

 8.3. Size:215K  inchange semiconductor
 2sk1674.pdf

2SK1671 2SK1671

isc N-Channel MOSFET Transistor 2SK1674DESCRIPTIONDrain Current I =24A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh Current, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 300 VDSS GS

 8.4. Size:216K  inchange semiconductor
 2sk1678.pdf

2SK1671 2SK1671

isc N-Channel MOSFET Transistor 2SK1678DESCRIPTIONDrain Current I =16A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh Current, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 VDSS GS

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: FDG315N | IXTH15N40MB

 

 
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