2SK1761 - описание и поиск аналогов

2SK1761 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220AB 1 D 2 3 1. Gate G 2. Drain (Flange) 3. Source S 2SK1761 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drai

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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2SK1762 Silicon N Channel MOS FET REJ03G0969-0200 (Previous ADE-208-1316) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D

2SK1764 Silicon N Channel MOS FET REJ03G0970-0200 (Previous ADE-208-1317) Rev.2.00 Sep 07, 2005 Application Low frequency amplifier High speed switching Features Low on-resistance High speed switching 4 V Gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PLZZ0004C

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

isc N-Channel MOSFET Transistor 2SK1767 DESCRIPTION Drain Current I = 3.5A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supplies, converters and power motor controls ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1766 DESCRIPTION Drain Current ID= 10A@ TC=25 Drain Source Voltage VDSS= 250V(Min) Fast Switching Speed APPLICATIONS Power supplies, converters and power motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 250 V VGS