2SK1807 Silicon N Channel MOS FET REJ03G0974-0200 (Previous: ADE-208-1321) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)D

isc N-Channel MOSFET Transistor 2SK1807DESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh Breakdown VoltageABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage (V =0) 900 VDS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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2SK1808 Silicon N Channel MOS FET REJ03G0975-0200 (Previous: ADE-208-1322) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)D

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Power F-MOS FETs 2SK18032SK1803Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 60mJ15.0 0.3 5.0 0.2VGSS=30V guaranteed 11.0 0.2 3.2High-speed switching : tf= 80ns3.2 0.1No secondary breakdown Applications2.0 0.22.0 0.1Non-contact relay1.1 0.1 0.6 0.2Solenoid drive5.45 0.3Motor drive10.9 0

isc N-Channel MOSFET Transistor 2SK1805DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSChopper regulator and motor driveABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage (V =0

isc N-Channel MOSFET Transistor 2SK1809DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSFast Switching SpeedLow on-resistanceFor switchinggregulator,DC-DC ConverterMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)a

isc N-Channel MOSFET Transistor 2SK1803DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSContactless relayDiving circuit for a solenoidDriving circuit for a motorControl equipmentSwitching power supply