2SK3070S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK3070S
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 100 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 75 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 130 nC
Время нарастания (tr): 300 ns
Выходная емкость (Cd): 1300 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0058 Ohm
Тип корпуса: LDPAK
2SK3070S Datasheet (PDF)
2sk3070s.pdf
isc N-Channel MOSFET Transistor 2SK3070SFEATURESDrain Current : I = 75A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 5.8m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
rej03g1063 2sk3070lsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3070.pdf
2SK3070(L), 2SK3070(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1063-0900 (Previous: ADE-208-684G) Rev.9.00 Sep 07, 2005 Features Low on-resistance RDS(on) =4.5 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(
2sk3070l.pdf
isc N-Channel MOSFET Transistor 2SK3070LFEATURESDrain Current : I = 75A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 5.8m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
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