H5N2514P. Аналоги и основные параметры

Наименование производителя: H5N2514P

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 200 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 250 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 70 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 350 ns

Cossⓘ - Выходная емкость: 820 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm

Тип корпуса: TO3P

Аналог (замена) для H5N2514P

- подборⓘ MOSFET транзистора по параметрам

 

H5N2514P даташит

 ..1. Size:65K  renesas
 rej03g1203 h5n2514p.pdf pdf_icon

H5N2514P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:93K  renesas
 rej03g0413 h5n2515p.pdf pdf_icon

H5N2514P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:114K  renesas
 rej03g0478 h5n2519p.pdf pdf_icon

H5N2514P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:92K  renesas
 h5n2512fl-m0.pdf pdf_icon

H5N2514P

Preliminary Datasheet H5N2512FL-M0 R07DS0997EJ0100 250V - 18A - MOS FET Rev.1.00 High Speed Power Switching Jan 08, 2013 Features Low on-resistance RDS(on) = 0.082 typ. (at ID = 9 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) D

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