H5N2801P datasheet, аналоги, основные параметры
Наименование производителя: H5N2801P 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 150 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 280 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 300 ns
Cossⓘ - Выходная емкость: 770 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.043 Ohm
Тип корпуса: TO3P
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Аналог (замена) для H5N2801P
- подборⓘ MOSFET транзистора по параметрам
H5N2801P даташит
rej03g0118 h5n2801p.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g0395 h5n2803pf.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1298 h5n2802pf.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Другие IGBT... H5N2509P, H5N2509PF, H5N2510DL, H5N2510DS, H5N2514P, H5N2515P, H5N2519P, H5N2522LS, 2N7002, H5N2802PF, H5N2803PF, H5N3003P, H5N3004P, H5N3005LD, H5N3005LS, H5N3008P, H5N3011P
Параметры MOSFET. Взаимосвязь и компромиссы
History: H5N2522LS
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