Справочник MOSFET. HAT2165N

 

HAT2165N Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: HAT2165N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 30 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 55 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 65 ns
   Cossⓘ - Выходная емкость: 1200 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0036 Ohm
   Тип корпуса: LFPAKI
     - подбор MOSFET транзистора по параметрам

 

HAT2165N Datasheet (PDF)

 0.1. Size:129K  renesas
rej03g1680 hat2165nds.pdfpdf_icon

HAT2165N

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.1. Size:102K  renesas
rej03g0004 hat2165h.pdfpdf_icon

HAT2165N

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:104K  renesas
hat2169n.pdfpdf_icon

HAT2165N

HAT2169N Silicon N Channel Power MOS FET Power Switching Preliminary Rev.0.01 May.29.2005 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.1 m typ. (at VGS = 10 V) Outline LFPAK-i5 6 7 8D D D D1(S)42(S)G 8(D)3(S)1, 2, 3 Source7(D)4(G)4 Gate6(D

 8.2. Size:102K  renesas
rej03g0046 hat2168h.pdfpdf_icon

HAT2165N

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: HIRF830 | IPD30N06S4L-23 | SDF07N50T | CS7N80F | SSW65R043SFD2 | SE85130GA | FDB9406L-F085

 

 
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