HAT2167N datasheet, аналоги, основные параметры
Наименование производителя: HAT2167N
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 20 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 30 ns
Cossⓘ - Выходная емкость: 620 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0058 Ohm
Тип корпуса: LFPAKI
Аналог (замена) для HAT2167N
- подборⓘ MOSFET транзистора по параметрам
HAT2167N даташит
rej03g1681 hat2167nds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g0039 hat2167h.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
hat2169n.pdf
HAT2169N Silicon N Channel Power MOS FET Power Switching Preliminary Rev.0.01 May.29.2005 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.1 m typ. (at VGS = 10 V) Outline LFPAK-i 5 6 7 8 D D D D 1(S) 4 2(S) G 8(D) 3(S) 1, 2, 3 Source 7(D) 4(G) 4 Gate 6(D
rej03g0046 hat2168h.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Другие IGBT... HAT2160N, HAT2164H, HAT2164N, HAT2165H, HAT2165N, HAT2166H, HAT2166N, HAT2167H, AO3400A, HAT2168H, HAT2168N, HAT2169H, HAT2169N, HAT2170H, HAT2170N, HAT2171H, HAT2171N
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: RM50P30DF | CRTT095N12N | CRSS028N10N | CRST030N10N | CRJQ80N65F | ASDM20N20KQ | ASDM20N100Q | ASDM12N65F | ASDM100R750PKQ | ASDM100R160NKQ | ASDM100R090NP | ASDM100R066NQ | ASDM100R045NQ | ASDM100N34KQ | ASDM100N15KQ | FTF30P35D
Popular searches
mpsa65 | 2sa794 | 2sa816 | 2sc897 datasheet | 2sd389 | mp41 transistor | nkt275 datasheet | 2sd947











