HAT2200R datasheet, аналоги, основные параметры

Наименование производителя: HAT2200R

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 4 ns

Cossⓘ - Выходная емкость: 280 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm

Тип корпуса: SOP8

Аналог (замена) для HAT2200R

- подборⓘ MOSFET транзистора по параметрам

 

HAT2200R даташит

 ..1. Size:107K  renesas
rej03g0232 hat2200r.pdfpdf_icon

HAT2200R

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.1. Size:84K  renesas
rej03g1678 hat2200wpds.pdfpdf_icon

HAT2200R

Preliminary Datasheet HAT2200WP REJ03G1678-0310 Silicon N Channel Power MOS FET Rev.3.10 Power Switching May 13, 2010 Features Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 22 m typ. (at VGS = 10 V) Outline RENESAS Package code PWSN0008DA-A (Package name WPAK) 5 6 7 8 D D D D 8 6 7 5 4 1, 2, 3

 8.1. Size:84K  renesas
rej03g1679 hat2201wpds.pdfpdf_icon

HAT2200R

Preliminary Datasheet HAT2201WP REJ03G1679-0310 Silicon N Channel Power MOS FET Rev.3.10 Power Switching May 21, 2010 Features Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 34 m typ. (at VGS = 10 V) Outline RENESAS Package code PWSN0008DA-A (Package name WPAK) 5 6 7 8 D D D D 8 6 7 5 4 1, 2, 3

 8.2. Size:98K  renesas
rej03g1239 hat2207c.pdfpdf_icon

HAT2200R

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Другие IGBT... HAT2195WP, HAT2196C, HAT2197R, HAT2197WP, HAT2198R, HAT2198WP, HAT2199R, HAT2199WP, IRF640N, HAT2200WP, HAT2201R, HAT2201WP, HAT2202C, HAT2203C, HAT2204C, HAT2205C, HAT2206C