Preliminary Datasheet HAT2201WP REJ03G1679-0310Silicon N Channel Power MOS FET Rev.3.10Power Switching May 21, 2010Features Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 34 m typ. (at VGS = 10 V) Outline RENESAS Package code: PWSN0008DA-A(Package name: WPAK)5 6 7 8D D D D86 754 1, 2, 3

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet HAT2200WP REJ03G1678-0310Silicon N Channel Power MOS FET Rev.3.10Power Switching May 13, 2010Features Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 22 m typ. (at VGS = 10 V) Outline RENESAS Package code: PWSN0008DA-A(Package name: WPAK)5 6 7 8D D D D86 754 1, 2, 3

Preliminary Datasheet HAT2203C R07DS0323EJ0500(Previous: REJ03G0447-0400)Silicon N Channel MOS FET Rev.5.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 69 m typ.(at VGS = 4.5 V) Low drive current High density mounting 2.5 V gate drive device Outline RENESAS Package code: PWSF0006JA-A(Package name: CMFPAK - 6)2 3 4 5D D

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.