HAT2221C
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: HAT2221C
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.79
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 1.5
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 6
ns
Cossⓘ - Выходная емкость: 27
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.15
Ohm
Тип корпуса: CMFPAK6
- подбор MOSFET транзистора по параметрам
HAT2221C
Datasheet (PDF)
..1. Size:95K renesas
rej03g1240 hat2221c.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.1. Size:71K renesas
rej03g1466 hat2226rds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.2. Size:93K renesas
rej03g1572 hat2220rds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.1. Size:43K renesas
hat2265h.pdf 

HAT2265H Silicon N Channel Power MOS FET Power Switching Rev.0.00 Sept.2004 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.5 m typ. (at VGS = 10 V) Lead Free Outline LFPAK54325 1D4G1, 2, 3 Source4 Gate5 DrainS S S1 2 3Rev.0.00, Sept.20
9.2. Size:84K renesas
rej03g1679 hat2201wpds.pdf 

Preliminary Datasheet HAT2201WP REJ03G1679-0310Silicon N Channel Power MOS FET Rev.3.10Power Switching May 21, 2010Features Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 34 m typ. (at VGS = 10 V) Outline RENESAS Package code: PWSN0008DA-A(Package name: WPAK)5 6 7 8D D D D86 754 1, 2, 3
9.3. Size:96K renesas
rej03g1328 hat2281cds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.4. Size:151K renesas
rej03g0396 hat2218r.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.5. Size:98K renesas
rej03g1239 hat2207c.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.6. Size:105K renesas
rej03g1370 hat2266hds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.7. Size:153K renesas
rej03g0448 hat2204c.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.8. Size:97K renesas
rej03g1238 hat2206c.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.9. Size:103K renesas
hat2256r.pdf 

Data Sheet HAT2256R Silicon N Channel Power MOSFET Power Switching R07DS1369EJ0401Rev.4.01Jan 20, 2017Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 24 m typ. (at V = 10 V) DS(on) GSOutline RENESAS Package code: PRSP0008DD-D(Package name: SOP-8)5 6 7 8D D D D56781, 2, 3
9.10. Size:162K renesas
rej03g0449 hat2217c.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.11. Size:84K renesas
rej03g1549 hat2244wpds.pdf 

Preliminary Datasheet HAT2244WP REJ03G1549-0410Silicon N Channel Power MOS FET Rev.4.10Power Switching May 13, 2010Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 10 m typ. (at VGS = 10 V) Outline RENESAS Package code: PWSN0008DA-A(Package name: WPAK)5 6 7 8D D D D86 754 1, 2,
9.12. Size:96K renesas
rej03g1241 hat2240c.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.13. Size:105K renesas
rej03g1463 hat2267hds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.14. Size:135K renesas
rej03g0578 hat2210rrj.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.15. Size:70K renesas
rej03g1470 hat2287wpds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.16. Size:106K renesas
rej03g0233 hat2201r.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.17. Size:125K renesas
rej03g0486 hat2215rrj.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.18. Size:130K renesas
rej03g1595 hat2208rds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.19. Size:105K renesas
rej03g1464 hat2279hds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.20. Size:202K renesas
hat2276r.pdf 

Data Sheet HAT2276R Silicon N Channel Power MOSFET Power Switching R07DS1371EJ0301Rev.3.01Jan 20, 2017Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 21 m typ. (at V = 10 V) DS(on) GSOutline RENESAS Package code: PRSP0008DD-D(Package name: SOP-8)7 8 5 6D D D D56781, 3 So
9.21. Size:107K renesas
rej03g0232 hat2200r.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.22. Size:122K renesas
rej03g1528 hat2299wpds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.23. Size:217K renesas
rej03g1236 hat2202c.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.24. Size:97K renesas
rej03g1354 hat2268cds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.25. Size:84K renesas
rej03g1678 hat2200wpds.pdf 

Preliminary Datasheet HAT2200WP REJ03G1678-0310Silicon N Channel Power MOS FET Rev.3.10Power Switching May 13, 2010Features Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 22 m typ. (at VGS = 10 V) Outline RENESAS Package code: PWSN0008DA-A(Package name: WPAK)5 6 7 8D D D D86 754 1, 2, 3
9.26. Size:96K renesas
rej03g1329 hat2282cds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.27. Size:84K renesas
r07ds0323ej hat2203c.pdf 

Preliminary Datasheet HAT2203C R07DS0323EJ0500(Previous: REJ03G0447-0400)Silicon N Channel MOS FET Rev.5.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 69 m typ.(at VGS = 4.5 V) Low drive current High density mounting 2.5 V gate drive device Outline RENESAS Package code: PWSF0006JA-A(Package name: CMFPAK - 6)2 3 4 5D D
9.28. Size:98K renesas
rej03g1237 hat2205c.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.29. Size:98K renesas
hat2280r.pdf 

Data Sheet HAT2280R Silicon N Channel Power MOSFET Power Switching R07DS1372EJ0201Rev.2.01Jan 20, 2017Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 27 m typ. (at V = 10 V) DS(on) GSOutline RENESAS Package code: PRSP0008DD-D(Package name: SOP-8)7 8 5 6D D D D56781, 3 So
9.30. Size:134K renesas
rej03g1596 hat2279nds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.31. Size:127K renesas
hat2275r.pdf 

HAT2275R Silicon N Channel Power MOS FET Power Switching Rev.4.00 Jul.31.2006 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 25 m typ. (at VGS = 10 V) Outline SOP-8567843217 8 5 6D DD D42GG1, 3 Source2, 4 Gate5, 6, 7, 8 DrainS1 S 3MOS1 MOS2Rev.4.00, Jul.3
Другие MOSFET... FQT7N10L
, FDP083N15A
, FQU10N20C
, FDP075N15A
, FQU11P06
, FQU12N20
, FDPF085N10A
, FQU13N06L
, IRFZ44
, FDB86102LZ
, FQU17P06
, FQU1N60C
, FDP085N10A
, FQU20N06L
, FQU2N100
, FQU2N60C
, FDMC8030
.
History: FS10AS-2
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