RJK0212DPA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: RJK0212DPA
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 30 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
|Vgs(off)|ⓘ - Минимальное напряжение отсечки: 1.2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 25 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 5.4 nC
trⓘ - Время нарастания: 2.6 ns
Cossⓘ - Выходная емкость: 340 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0108 Ohm
Тип корпуса: WPAK
Аналог (замена) для RJK0212DPA
RJK0212DPA Datasheet (PDF)
r07ds0219ej rjk0212dpa.pdf
Preliminary Datasheet RJK0212DPA R07DS0219EJ0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Dec 07, 2010Features Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008
r07ds0207ej rjk0215dpa.pdf
Preliminary Datasheet RJK0215DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0207EJ0110High Speed Power Switching Rev.1.10Sep 05, 2011Applications DC-DC conversion for PC and Server. Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DD-A
r07ds0217ej rjk0210dpa.pdf
Preliminary Datasheet RJK0210DPA R07DS0217EJ0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Dec 07, 2010Features Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.5 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN00
rej03g1942 rjk0213dpads.pdf
Preliminary Datasheet RJK0213DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1942-0100Power Switching Rev.1.00Jun 15, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.85 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENE
r07ds0206ej rjk0214dpa.pdf
Preliminary Datasheet RJK0214DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0206EJ0110High Speed Power Switching Rev.1.10Sep 02, 2011Applications DC-DC conversion for PC and Server. Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DD-A
r07ds0218ej rjk0211dpa.pdf
Preliminary Datasheet RJK0211DPA R07DS0218EJ0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Dec 07, 2010Features Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.8 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN00
r07ds0208ej rjk0216dpa.pdf
Preliminary Datasheet RJK0216DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0208EJ0110High Speed Power Switching Rev.1.10Sep 05, 2011Applications DC-DC conversion for PC and Server. Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DD-A
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: IPU80R600P7 | IPU80R1K4P7
History: IPU80R600P7 | IPU80R1K4P7
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918