Справочник MOSFET. RJK0349DPA

 

RJK0349DPA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RJK0349DPA
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 45 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 25 nC
   trⓘ - Время нарастания: 6.5 ns
   Cossⓘ - Выходная емкость: 740 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0031 Ohm
   Тип корпуса: WPAK

 Аналог (замена) для RJK0349DPA

 

 

RJK0349DPA Datasheet (PDF)

 0.1. Size:95K  renesas
 rej03g1645 rjk0349dpads.pdf

RJK0349DPA RJK0349DPA

Preliminary Datasheet RJK0349DPA REJ03G1645-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.4 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code: PWSN0008DC-A(Package name: W

 6.1. Size:127K  renesas
 rej03g1659 rjk0349dspds.pdf

RJK0349DPA RJK0349DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:125K  renesas
 rej03g1644 rjk0348dspds.pdf

RJK0349DPA RJK0349DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:95K  renesas
 rej03g1643 rjk0348dpads.pdf

RJK0349DPA RJK0349DPA

Preliminary Datasheet RJK0348DPA REJ03G1643-0310Silicon N Channel Power MOS FET Rev.3.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.9 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code: PWSN0008DC-A(Package name: W

 8.3. Size:91K  renesas
 rej03g1642 rjk0346dpads.pdf

RJK0349DPA RJK0349DPA

Preliminary Datasheet RJK0346DPA REJ03G1642-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.5 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code: PWSN0008DC-A(Package name: W

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