RJK0349DPA datasheet, аналоги, основные параметры

Наименование производителя: RJK0349DPA

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 50 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 45 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 6.5 ns

Cossⓘ - Выходная емкость: 740 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0031 Ohm

Тип корпуса: WPAK

Аналог (замена) для RJK0349DPA

- подборⓘ MOSFET транзистора по параметрам

 

RJK0349DPA даташит

 0.1. Size:95K  renesas
 rej03g1645 rjk0349dpads.pdf pdf_icon

RJK0349DPA

Preliminary Datasheet RJK0349DPA REJ03G1645-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.4 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code PWSN0008DC-A (Package name W

 6.1. Size:127K  renesas
 rej03g1659 rjk0349dspds.pdf pdf_icon

RJK0349DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:125K  renesas
 rej03g1644 rjk0348dspds.pdf pdf_icon

RJK0349DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:95K  renesas
 rej03g1643 rjk0348dpads.pdf pdf_icon

RJK0349DPA

Preliminary Datasheet RJK0348DPA REJ03G1643-0310 Silicon N Channel Power MOS FET Rev.3.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.9 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code PWSN0008DC-A (Package name W

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