Справочник MOSFET. RJK03C5DPA

 

RJK03C5DPA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RJK03C5DPA
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 50 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Максимально допустимый постоянный ток стока |Id|: 50 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 8 ns
   Выходная емкость (Cd): 690 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0029 Ohm
   Тип корпуса: WPAK

 Аналог (замена) для RJK03C5DPA

 

 

RJK03C5DPA Datasheet (PDF)

 0.1. Size:80K  renesas
rej03g1921 rjk03c5dpads.pdf

RJK03C5DPA
RJK03C5DPA

Preliminary Datasheet RJK03C5DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1921-0200Power Switching Rev.2.00Apr 27, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.4 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES

 8.1. Size:278K  renesas
rej03g1831 rjk03c2dpbds.pdf

RJK03C5DPA
RJK03C5DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:278K  renesas
rej03g1830 rjk03c1dpbds.pdf

RJK03C5DPA
RJK03C5DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:117K  renesas
rej03g1822 rjk03c0dpads.pdf

RJK03C5DPA
RJK03C5DPA

Preliminary Datasheet RJK03C0DPA REJ03G1822-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.5 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-

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