BUZ71N - CHANNEL 50V - 0.085 - 17A TO-220STripFET POWER MOSFETTYPE VDSS RDS(on) IDBUZ71 50 V

BUZ71Data Sheet June 1999 File Number 2418.214A, 50V, 0.100 Ohm, N-Channel Power FeaturesMOSFET 14A, 50VThis is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.100field effect transistor designed for applications such as SOA is Power Dissipation Limitedswitching regulators, switching converters, motor drivers, Nanosecond Switching Speedsrelay dr

isc N-Channel Mosfet Transistor BUZ71FEATURESLow RDS(on)SOA is Power Dissipation LimitedNanosecond Switching Speeds100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current , high speed switchingSolenoid and relay driversDC-DC & DC-AC convertersABSOLUTE MAXIMUM RATINGS(T =25)a

BUZ71ABUZ71AFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE V R IDSS DS(on) DBUZ71A 50 V

BUZ 71 S2Not for new designSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 71 S2 60 V 14 A 0.1 TO-220 AB C67078-S1316-A9Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 28 C 14Pulsed drain current IDpulsTC = 25 C 56Avalanche curren

isc N-Channel Mosfet Transistor BUZ71AFEATURESLow RDS(on)V Rated at 20VGSSilicon Gate for Fast Switching SpeedRuggedLow Drive RequirementsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned especially for applications such as switching regulators,switching converters,motor drivers ,relay drivers.AB