RJK1051DPB datasheet, подбор замены

 ..1. Size:81K  renesas
 r07ds0082ej rjk1051dpb.pdf 

Preliminary Datasheet RJK1051DPB R07DS0082EJ0102 (Previous REJ03G1768-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 30 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Package

 8.1. Size:109K  renesas
 r07ds0093ej rjk1054dpb.pdf 

Preliminary Datasheet RJK1054DPB R07DS0093EJ0200 (Previous REJ03G1886-0100) Silicon N Channel Power MOS FET Rev.2.00 Power Switching Aug 17, 2010 Features High speed switching Pb-free Low drive current Halogen-free Low on-resistance High density mounting RDS(on) = 17 m typ. (at VGS = 10 V) Outline RENESAS Package code PTZZ0005DA-A (Pack

 8.2. Size:81K  renesas
 r07ds0083ej rjk1052dpb.pdf 

Preliminary Datasheet RJK1052DPB R07DS0083EJ0102 (Previous REJ03G1769-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 15 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Packa

 8.3. Size:180K  renesas
 rej03g1887 rjk1055dpbds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:179K  renesas
 rej03g1888 rjk1056dpbds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. Size:81K  renesas
 r07ds0084ej rjk1053dpb.pdf 

Preliminary Datasheet RJK1053DPB R07DS0084EJ0102 (Previous REJ03G1770-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 10 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Packa