Справочник MOSFET. RJK1056DPB

 

RJK1056DPB Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: RJK1056DPB
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 65 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 25 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm
   Тип корпуса: LFPAK
     - подбор MOSFET транзистора по параметрам

 

RJK1056DPB Datasheet (PDF)

 0.1. Size:179K  renesas
rej03g1888 rjk1056dpbds.pdfpdf_icon

RJK1056DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:109K  renesas
r07ds0093ej rjk1054dpb.pdfpdf_icon

RJK1056DPB

Preliminary Datasheet RJK1054DPB R07DS0093EJ0200(Previous: REJ03G1886-0100)Silicon N Channel Power MOS FET Rev.2.00Power Switching Aug 17, 2010Features High speed switching Pb-free Low drive current Halogen-free Low on-resistance High density mounting RDS(on) = 17 m typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A(Pack

 8.2. Size:81K  renesas
r07ds0083ej rjk1052dpb.pdfpdf_icon

RJK1056DPB

Preliminary Datasheet RJK1052DPB R07DS0083EJ0102(Previous: REJ03G1769-0101)Silicon N Channel Power MOS FET Rev.1.02Power Switching Jul 30, 2010Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 15 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Packa

 8.3. Size:81K  renesas
r07ds0082ej rjk1051dpb.pdfpdf_icon

RJK1056DPB

Preliminary Datasheet RJK1051DPB R07DS0082EJ0102(Previous: REJ03G1768-0101)Silicon N Channel Power MOS FET Rev.1.02Power Switching Jul 30, 2010Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 30 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Package

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: CET04N10 | H5N2004DS | DMP22M2UPS-13 | STD3N30T4

 

 
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