RJK1056DPB datasheet, аналоги, основные параметры

Наименование производителя: RJK1056DPB

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 65 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 25 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm

Тип корпуса: LFPAK

Аналог (замена) для RJK1056DPB

- подборⓘ MOSFET транзистора по параметрам

 

RJK1056DPB даташит

 0.1. Size:179K  renesas
rej03g1888 rjk1056dpbds.pdfpdf_icon

RJK1056DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:109K  renesas
r07ds0093ej rjk1054dpb.pdfpdf_icon

RJK1056DPB

Preliminary Datasheet RJK1054DPB R07DS0093EJ0200 (Previous REJ03G1886-0100) Silicon N Channel Power MOS FET Rev.2.00 Power Switching Aug 17, 2010 Features High speed switching Pb-free Low drive current Halogen-free Low on-resistance High density mounting RDS(on) = 17 m typ. (at VGS = 10 V) Outline RENESAS Package code PTZZ0005DA-A (Pack

 8.2. Size:81K  renesas
r07ds0083ej rjk1052dpb.pdfpdf_icon

RJK1056DPB

Preliminary Datasheet RJK1052DPB R07DS0083EJ0102 (Previous REJ03G1769-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 15 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Packa

 8.3. Size:81K  renesas
r07ds0082ej rjk1051dpb.pdfpdf_icon

RJK1056DPB

Preliminary Datasheet RJK1051DPB R07DS0082EJ0102 (Previous REJ03G1768-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 30 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Package

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