Справочник MOSFET. RJK1211DPA

 

RJK1211DPA Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: RJK1211DPA
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 15 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 120 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: WPAK
 

 Аналог (замена) для RJK1211DPA

   - подбор ⓘ MOSFET транзистора по параметрам

 

RJK1211DPA Datasheet (PDF)

 ..1. Size:108K  renesas
r07ds0089ej rjk1211dpa.pdfpdf_icon

RJK1211DPA

Preliminary Datasheet RJK1211DPA R07DS0089EJ0300Silicon N Channel Power MOS FET Rev.3.00Power Switching Apr 11, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 100 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-B

 6.1. Size:95K  renesas
r07ds0090ej rjk1211dns.pdfpdf_icon

RJK1211DPA

Preliminary Datasheet RJK1211DNS R07DS0090EJ0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Jan 18, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 100 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-

 8.1. Size:149K  renesas
r07ds0091ej rjk1212dpa.pdfpdf_icon

RJK1211DPA

Preliminary Datasheet RJK1212DPA R07DS0091EJ0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Apr 11, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 240 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-B

 8.2. Size:125K  renesas
r07ds0092ej rjk1212dns.pdfpdf_icon

RJK1211DPA

Preliminary Datasheet RJK1212DNS R07DS0092EJ0100Silicon N Channel Power MOS FET Rev.1.00Power Switching Jun 18, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 240 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-

Другие MOSFET... RJK1028DSP , RJK1051DPB , RJK1052DPB , RJK1053DPB , RJK1054DPB , RJK1055DPB , RJK1056DPB , RJK1211DNS , IRFB4227 , RJK1212DNS , RJK1212DPA , RJK1525DPE , RJK1525DPF , RJK1526DPE , RJK1526DPF , RJK1526DPJ , RJK1529DPK .

History: HMS10N60K | FQD13N10LTF | TPCJ2101

 

 
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