Справочник MOSFET. RJK1211DPA

 

RJK1211DPA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RJK1211DPA
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 15 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 120 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 1.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Qgⓘ - Общий заряд затвора: 8 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: WPAK

 Аналог (замена) для RJK1211DPA

 

 

RJK1211DPA Datasheet (PDF)

 ..1. Size:108K  renesas
 r07ds0089ej rjk1211dpa.pdf

RJK1211DPA RJK1211DPA

Preliminary Datasheet RJK1211DPA R07DS0089EJ0300Silicon N Channel Power MOS FET Rev.3.00Power Switching Apr 11, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 100 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-B

 6.1. Size:95K  renesas
 r07ds0090ej rjk1211dns.pdf

RJK1211DPA RJK1211DPA

Preliminary Datasheet RJK1211DNS R07DS0090EJ0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Jan 18, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 100 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-

 8.1. Size:149K  renesas
 r07ds0091ej rjk1212dpa.pdf

RJK1211DPA RJK1211DPA

Preliminary Datasheet RJK1212DPA R07DS0091EJ0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Apr 11, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 240 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-B

 8.2. Size:125K  renesas
 r07ds0092ej rjk1212dns.pdf

RJK1211DPA RJK1211DPA

Preliminary Datasheet RJK1212DNS R07DS0092EJ0100Silicon N Channel Power MOS FET Rev.1.00Power Switching Jun 18, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 240 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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