RJK1211DPA datasheet, аналоги, основные параметры

Наименование производителя: RJK1211DPA

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 15 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 120 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm

Тип корпуса: WPAK

Аналог (замена) для RJK1211DPA

- подборⓘ MOSFET транзистора по параметрам

 

RJK1211DPA даташит

 ..1. Size:108K  renesas
r07ds0089ej rjk1211dpa.pdfpdf_icon

RJK1211DPA

Preliminary Datasheet RJK1211DPA R07DS0089EJ0300 Silicon N Channel Power MOS FET Rev.3.00 Power Switching Apr 11, 2011 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 100 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-B

 6.1. Size:95K  renesas
r07ds0090ej rjk1211dns.pdfpdf_icon

RJK1211DPA

Preliminary Datasheet RJK1211DNS R07DS0090EJ0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Jan 18, 2011 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 100 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008JB-

 8.1. Size:149K  renesas
r07ds0091ej rjk1212dpa.pdfpdf_icon

RJK1211DPA

Preliminary Datasheet RJK1212DPA R07DS0091EJ0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Apr 11, 2011 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 240 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-B

 8.2. Size:125K  renesas
r07ds0092ej rjk1212dns.pdfpdf_icon

RJK1211DPA

Preliminary Datasheet RJK1212DNS R07DS0092EJ0100 Silicon N Channel Power MOS FET Rev.1.00 Power Switching Jun 18, 2011 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 240 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008JB-

Другие IGBT... RJK1028DSP, RJK1051DPB, RJK1052DPB, RJK1053DPB, RJK1054DPB, RJK1055DPB, RJK1056DPB, RJK1211DNS, 10N60, RJK1212DNS, RJK1212DPA, RJK1525DPE, RJK1525DPF, RJK1526DPE, RJK1526DPF, RJK1526DPJ, RJK1529DPK