Справочник MOSFET. BUZ71A

 

BUZ71A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BUZ71A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 80 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 450 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.12 Ohm
   Тип корпуса: TO220

 Аналог (замена) для BUZ71A

 

 

BUZ71A Datasheet (PDF)

 ..1. Size:87K  st
 buz71a.pdf

BUZ71A BUZ71A

BUZ71ABUZ71AFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE V R IDSS DS(on) DBUZ71A 50 V

 ..2. Size:231K  inchange semiconductor
 buz71a.pdf

BUZ71A BUZ71A

isc N-Channel Mosfet Transistor BUZ71AFEATURESLow RDS(on)V Rated at 20VGSSilicon Gate for Fast Switching SpeedRuggedLow Drive RequirementsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned especially for applications such as switching regulators,switching converters,motor drivers ,relay drivers.AB

 9.1. Size:281K  st
 buz71.pdf

BUZ71A BUZ71A

BUZ71N - CHANNEL 50V - 0.085 - 17A TO-220STripFET POWER MOSFETTYPE VDSS RDS(on) IDBUZ71 50 V

 9.2. Size:382K  st
 buz71 buz71fi.pdf

BUZ71A BUZ71A

 9.3. Size:137K  siemens
 buz71s2.pdf

BUZ71A BUZ71A

BUZ 71 S2Not for new designSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 71 S2 60 V 14 A 0.1 TO-220 AB C67078-S1316-A9Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 28 C 14Pulsed drain current IDpulsTC = 25 C 56Avalanche curren

 9.4. Size:48K  intersil
 buz71.pdf

BUZ71A BUZ71A

BUZ71Data Sheet June 1999 File Number 2418.214A, 50V, 0.100 Ohm, N-Channel Power FeaturesMOSFET 14A, 50VThis is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.100field effect transistor designed for applications such as SOA is Power Dissipation Limitedswitching regulators, switching converters, motor drivers, Nanosecond Switching Speedsrelay dr

 9.5. Size:229K  inchange semiconductor
 buz71.pdf

BUZ71A BUZ71A

isc N-Channel Mosfet Transistor BUZ71FEATURESLow RDS(on)SOA is Power Dissipation LimitedNanosecond Switching Speeds100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current , high speed switchingSolenoid and relay driversDC-DC & DC-AC convertersABSOLUTE MAXIMUM RATINGS(T =25)a

Другие MOSFET... BUZ50B-220SM , BUZ50BSM , BUZ50B-TO220M , BUZ60 , BUZ60B , BUZ63 , BUZ64 , BUZ71 , IRF1407 , BUZ71AFI , BUZ71FI , BUZ72A , BUZ74 , BUZ74A , BUZ76 , BUZ76A , BUZ80 .

 

 
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