BUZ71AFI - описание и поиск аналогов

BUZ71A BUZ71AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V R I DSS DS(on) D BUZ71A 50 V

isc N-Channel Mosfet Transistor BUZ71A FEATURES Low R DS(on) V Rated at 20V GS Silicon Gate for Fast Switching Speed Rugged Low Drive Requirements Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed especially for applications such as switching regulators, switching converters,motor drivers ,relay drivers. AB

BUZ71 N - CHANNEL 50V - 0.085 - 17A TO-220 STripFET POWER MOSFET TYPE VDSS RDS(on) ID BUZ71 50 V

BUZ 71 S2 Not for new design SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 71 S2 60 V 14 A 0.1 TO-220 AB C67078-S1316-A9 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 28 C 14 Pulsed drain current IDpuls TC = 25 C 56 Avalanche curren

BUZ71 Data Sheet June 1999 File Number 2418.2 14A, 50V, 0.100 Ohm, N-Channel Power Features MOSFET 14A, 50V This is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.100 field effect transistor designed for applications such as SOA is Power Dissipation Limited switching regulators, switching converters, motor drivers, Nanosecond Switching Speeds relay dr

isc N-Channel Mosfet Transistor BUZ71 FEATURES Low R DS(on) SOA is Power Dissipation Limited Nanosecond Switching Speeds 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High current , high speed switching Solenoid and relay drivers DC-DC & DC-AC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a