Справочник MOSFET. RJK2557DPA

 

RJK2557DPA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RJK2557DPA
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 30 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 17 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 34 ns
   Cossⓘ - Выходная емкость: 205 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.128 Ohm
   Тип корпуса: WPAK

 Аналог (замена) для RJK2557DPA

 

 

RJK2557DPA Datasheet (PDF)

 0.1. Size:115K  renesas
rej03g1777 rjk2557dpads.pdf

RJK2557DPA
RJK2557DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:115K  renesas
rej03g1776 rjk2555dpads.pdf

RJK2557DPA
RJK2557DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.1. Size:85K  renesas
rej03g1486 rjk2511dpkds.pdf

RJK2557DPA
RJK2557DPA

Preliminary Datasheet RJK2511DPK REJ03G1486-0500Silicon N Channel MOS FET Rev.5.00High Speed Power Switching Jun 30, 2010Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE-A(Package name:TO-3P)D1. Gate2. Drain (Flange)G3. Source12S3Absolute Maximum Ratings (Ta = 25C) Item S

 9.2. Size:87K  renesas
rej03g0508 rjk2508dpk.pdf

RJK2557DPA
RJK2557DPA

Preliminary Datasheet RJK2508DPK REJ03G0508-0300Silicon N Channel MOS FET Rev.3.00High Speed Power Switching Jun 30, 2010Features Low on-resistance Low leakage current High speed switching Outline PRSS0004ZE-A(Previous code: TO-3P)D1. Gate2. Drain (Flange)G3. SourceS123Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit

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