Справочник MOSFET. RJK4007DPP-M0

 

RJK4007DPP-M0 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: RJK4007DPP-M0

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 32 W

Предельно допустимое напряжение сток-исток |Uds|: 400 V

Предельно допустимое напряжение затвор-исток |Ugs|: 30 V

Максимально допустимый постоянный ток стока |Id|: 7.6 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 24.5 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.47 Ohm

Тип корпуса: TO220FL

Аналог (замена) для RJK4007DPP-M0

 

 

RJK4007DPP-M0 Datasheet (PDF)

4.1. r07ds0229ej rjk4007dpp.pdf Size:76K _renesas

RJK4007DPP-M0
RJK4007DPP-M0

Preliminary Datasheet RJK4007DPP-M0 R07DS0229EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Dec 15, 2010Features Low on-resistance RDS(on) = 0.47 typ. (at ID = 7 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D1. Gate2. DrainG3. Sourc

8.1. rjk4002dje.pdf Size:84K _renesas

RJK4007DPP-M0
RJK4007DPP-M0

Preliminary Datasheet RJK4002DJE R07DS0842EJ0200400V - 3A - MOS FET Rev.2.00High Speed Power Switching Aug 03, 2012Features Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0003DC-A(Package name: TO-92 Mod)D1. SourceG2. Drain3. GateS321Absolute Max

8.2. r07ds0551ej rjk4002dpp.pdf Size:78K _renesas

RJK4007DPP-M0
RJK4007DPP-M0

Preliminary Datasheet RJK4002DPP-M0 R07DS0551EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Oct 03, 2011Features Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D1. Gate2. DrainG3. Source123SAbso

 8.3. rjk4002dpd.pdf Size:94K _renesas

RJK4007DPP-M0
RJK4007DPP-M0

Preliminary Datasheet RJK4002DPD R07DS0835EJ0210400V - 3A - MOS FET Rev.2.10High Speed Power Switching Jan 29, 2014Features Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) Low drive current High speed switching Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3. Source1

8.4. rej03g1547 rjk4006dpdds.pdf Size:116K _renesas

RJK4007DPP-M0
RJK4007DPP-M0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. r07ds0228ej rjk4006dpp.pdf Size:79K _renesas

RJK4007DPP-M0
RJK4007DPP-M0

Preliminary Datasheet RJK4006DPP-M0 R07DS0228EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Dec 14, 2010Features Low on-resistance RDS(on) = 0.69 typ. (ID = 4 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D1. Gate2. DrainG3. Source

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