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RJK4015DPK MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RJK4015DPK
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 400 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 62.6 nC
   trⓘ - Время нарастания: 75 ns
   Cossⓘ - Выходная емкость: 305 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.165 Ohm
   Тип корпуса: TO3P

 Аналог (замена) для RJK4015DPK

 

 

RJK4015DPK Datasheet (PDF)

 0.1. Size:91K  renesas
rej03g1590 rjk4015dpkds.pdf

RJK4015DPK
RJK4015DPK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:117K  renesas
rej03g1513 rjk4013dpeds.pdf

RJK4015DPK
RJK4015DPK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:87K  renesas
rej03g1575 rjk4012dpeds.pdf

RJK4015DPK
RJK4015DPK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:88K  renesas
rej03g1576 rjk4014dpkds.pdf

RJK4015DPK
RJK4015DPK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:79K  renesas
r07ds0215ej rjk4018dpk.pdf

RJK4015DPK
RJK4015DPK

Preliminary Datasheet RJK4018DPK R07DS0215EJ0200(Previous: REJ03G1490-0100)Silicon N Channel MOS FET Rev2.00High Speed Power Switching Dec 03, 2010Features Low on-resistance RDS(on) = 0.085 typ. (at ID = 21.5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE-A(Package name:TO-3P)D1. Ga

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