RJK5015DPK datasheet, аналоги, основные параметры

Наименование производителя: RJK5015DPK

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 150 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 25 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 59 ns

Cossⓘ - Выходная емкость: 270 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.24 Ohm

Тип корпуса: TO3P

Аналог (замена) для RJK5015DPK

- подборⓘ MOSFET транзистора по параметрам

 

RJK5015DPK даташит

 0.1. Size:82K  renesas
rej03g1360 rjk5015dpkds.pdfpdf_icon

RJK5015DPK

Preliminary Datasheet RJK5015DPK REJ03G1360-0300 Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching Jun 30, 2010 Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate 2. Drain (Flange) G 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item S

 5.1. Size:92K  renesas
rej03g1753 rjk5015dpmds.pdfpdf_icon

RJK5015DPK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:83K  renesas
r07ds0487ej rjk5013dpe.pdfpdf_icon

RJK5015DPK

Preliminary Datasheet RJK5013DPE R07DS0487EJ0300 (Previous REJ03G1488-0200) Silicon N Channel MOS FET Rev.3.00 Jun 29, 2011 High Speed Power Switching Features Low on-resistance RDS(on) = 0. 385 typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) )

 8.2. Size:108K  renesas
r07ds0421ej rjk5012dpp.pdfpdf_icon

RJK5015DPK

Preliminary Datasheet RJK5012DPP-M0 R07DS0421EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 31, 2011 Features Low on-resistance RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) D 1. Gate 2. Drain G 3. Source

Другие IGBT... RJK4518DPK, RJK5003DPD, RJK5006DPD, RJK5012DPE, RJK5012DPP-M0, RJK5013DPE, RJK5013DPK, RJK5014DPK, IRF520, RJK5015DPM, RJK5018DPK, RJK5020DPK, RJK5026DPE, RJK5026DPP-M0, RJK5030DPD, RJK5030DPP-M0, RJK5031DPD