BUZ76 - Даташиты. Аналоги. Основные параметры

BUZ 76SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 76 400 V 3 A 1.8 TO-220 AB C67078-S1315-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 37 C 3Pulsed drain current IDpulsTC = 25 C 12Avalanche current,limited by Tjmax IAR 3A

isc N-Channel Mosfet Transistor BUZ76FEATURESDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 1.8(Max)DS(on)Fast Switching SpeedLow Drive RequirementMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for witched mode power supplies,motor control,welding,DC-DC & DC-AC convert

BUZ 76 ASIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 76 A 400 V 2.7 A 2.5 TO-220 AB C67078-S1315-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 23 C 2.7Pulsed drain current IDpulsTC = 25 C 11Avalanche current,limited by Tjmax

isc N-Channel Mosfet Transistor BUZ76AFEATURES2.6A, 400VSOA is Power Dissipation LimitedNanosecond Switching SpeedsLinear Transfer CharacteristicsHigh Input ImpedanceMajority Carrier DeviceMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for switching regulators, switching converters, motordrivers,relay