Preliminary RJK6053DPP-M0 Silicon N Channel MOS FET High Speed Power Switching REJ03G1800-0100 Rev.1.00 Jul 02, 2009 Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A)(Package name: TO-220FL)D1. Gate2. DrainG3. Source123SAbsolute Maximum Ratings (Ta = 25C) Item Symbol Ra

Preliminary RJK6054DPP-M0 Silicon N Channel MOS FET High Speed Power Switching REJ03G1801-0100 Rev.1.00 Jul 02, 2009 Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A)(Package name: TO-220FL)D1. Gate2. DrainG3. Source123SAbsolute Maximum Ratings (Ta = 25C) Item Symbol Ra

Preliminary RJK6052DPP-M0 Silicon N Channel MOS FET High Speed Power Switching REJ03G1799-0100 Rev.1.00 Jul 02, 2009 Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A)(Package name: TO-220FL)D1. Gate2. DrainG3. Source123SAbsolute Maximum Ratings (Ta = 25C) Item Symbol Ra

Preliminary Datasheet RJK6035DPP-E0 R07DS0616EJ0100600V - 6A - MOS FET Rev.1.00High Speed Power Switching Feb 24, 2012Features Low on-resistance RDS(on) = 1.1 typ. (at ID = 3 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AG-A(Package name: TO-220FP)D1. Gate2. DrainG3. Source1S

Preliminary Datasheet RJK6018DPM R07DS0131EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Sep 09, 2010Features Low on-resistance RDS(on) = 0.2 typ. (at ID = 15 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)D1. Gate2. DrainG3. SourceS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK6024DPE R07DS0424EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Jun 06, 2011Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(S)-(1) )D41. Gate2. Drain3. Sourc

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK6018DPK R07DS0495EJ0200(Previous: REJ03G1537-0100)600 V - 30 A - MOS FET Rev.2.00High Speed Power Switching Jul 22, 2011Features Low on-resistance RDS(on) = 0.2 typ. (at ID = 15 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE-A(Package name:TO-3P)D1. Gate2.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK6006DPD REJ03G1935-0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Jun 01, 2010Features Low on-state resistance RDS(on) = 1.4 typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3. Source124. Drain3

Preliminary Datasheet RJK6013DPP-E0 R07DS0612EJ0100600V - 11A - MOS FET Rev.1.00High Speed Power Switching Feb 20, 2012Features Low on-resistance RDS(on) = 0.58 typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AG-A(Package name: TO-220FP)D1. Gate2. DrainG3. Source

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK6024DP3-A0 R07DS1106EJ0100600 V - 0.4 A - MOS FET Rev.1.00High Speed Power Switching Aug 23, 2013Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSP0004ZB-A(Package name: SOT-223)D41. Gate2. DrainG3 3. Sourc

Preliminary Datasheet RJK6012DPE R07DS0445EJ0300(Previous: REJ03G1481-0200)Silicon N Channel MOS FET Rev.3.00High Speed Power Switching Jun 17, 2011Features Low on-resistance RDS(on) = 0.77 typ. (at ID = 5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(S)-(1) )D

Preliminary DatasheetRJK6036DP3-A0 R07DS0841EJ0100600V - 2A - MOS FET Rev.1.00High Speed Power Switching Jul 05, 2011Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting Outline RENESAS Package code: PRSP0004ZB-APackage name: SOT-223D41. Gate2. DrainG3 3. Source24.

Preliminary Datasheet RJK6024DPD REJ03G1936-0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Jun 01, 2010Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3. Source

Preliminary Datasheet RJK6002DPE R07DS0214EJ0100600V - 2A - MOS FET Rev.1.00High Speed Power Switching Jun 21, 2012Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting Outline RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(S)-(1) )D41. Gate2. Drain3. SourceG4.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK6025DPD R07DS0676EJ0100600V - 1A - MOS FET Rev.1.00High Speed Power Switching Feb 17, 2012Features Low on-resistance RDS(on) = 13.5 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3. Source12

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK6025DPH-E0 R07DS1012EJ0100600V - 1A - MOS FET Rev.1.00High Speed Power Switching Feb 12, 2013Features Low on-resistance RDS(on) = 13 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting Outline RENESAS Package code: PRSS0004ZJ-B(Package name: TO-251) D41. Gate2. DrainG3. Source4. D

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary DatasheetRJK6002DJE R07DS0845EJ0100600V - 2A - MOS FET Rev.1.00High Speed Power Switching Jul 05, 2011Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003DC-A(Package name: TO-92 Mod)D1. SourceG2. Drain3. GateS321

Preliminary Datasheet RJK60S5DPK-M0 R07DS0245EJ0400600V - 20A - SJ MOS FET Rev.4.00High Speed Power Switching Apr 23, 2012Features Superjunction MOSFET Low on-resistance RDS(on) = 0.150 typ. (at ID = 10 A, VGS = 10 V, Ta = 25C) High speed switching tf = 23 ns typ. (at ID = 10 A, VGS = 10 V, RL = 30 , Rg = 10 , Ta = 25C) Outline RENESAS Package

Preliminary Datasheet RJK6034DPD-E0 R07DS0553EJ0100600 V - 1 A - MOS FET Rev.1.00High Speed Power Switching Oct 13, 2011Features Low on-resistance RDS(on) = 9.8 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZJ-AD(Package name : TO-252)41. Gate2. DrainG3. Source

Preliminary Datasheet RJK6032DPH-E0 R07DS0993EJ0100600V - 3A - MOS FET Rev.1.00High Speed Power Switching Jan 23, 2013Features Low on-resistance RDS(on) = 3.3 typ. (at ID = 1.0 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting Outline RENESAS Package code: PRSS0004ZJ-B(Package name: TO-251) D41. Gate2. DrainG3. Source4.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK6002DPH-E0 R07DS1047EJ0100600V - 2A - MOS FET Rev.1.00High Speed Power Switching Mar 21, 2013Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZJ-B(Package name: TO-251) D41. Gate2. DrainG3. Source4. D

Preliminary RJK6066DPP-M0 Silicon N Channel MOS FET High Speed Power Switching REJ03G1802-0100 Rev.1.00 Jul 02, 2009 Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A)(Package name: TO-220FL)D1. Gate2. DrainG3. Source123SAbsolute Maximum Ratings (Ta = 25C) Item Symbol Ra

Preliminary Datasheet RJK6029DJA REJ03G1895-0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Jun 18, 2010Features Low on-resistance RDS(on) = 13.5 typ. (at ID = 0.1 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting Outline RENESAS Package code: PRSS0003DA-A(Package name: TO-92(1))D1. Source2. Drain3. GateG

Preliminary DatasheetRJK60S5DPK-M0 R07DS0245EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Jan 19, 2011Features Low on-resistance RDS(on) = 0.150 typ. (at ID = 10 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZH-A(Package name:TO-3PSG)D1. Gate2. Drain (Flange)G3

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

isc N-Channel MOSFET Transistor RJK6015DPKFEATURESDrain Current I = 21A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.36(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS Low on-resistance Low leakage current High speed switching

isc N-Channel MOSFET Transistor RJK6014DPKFEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-