RJK6053DPP-M0 - описание и поиск аналогов

Preliminary RJK6053DPP-M0 Silicon N Channel MOS FET High Speed Power Switching REJ03G1800-0100 Rev.1.00 Jul 02, 2009 Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code PRSS0003AF-A) (Package name TO-220FL) D 1. Gate 2. Drain G 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ra

Preliminary RJK6054DPP-M0 Silicon N Channel MOS FET High Speed Power Switching REJ03G1801-0100 Rev.1.00 Jul 02, 2009 Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code PRSS0003AF-A) (Package name TO-220FL) D 1. Gate 2. Drain G 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ra

Preliminary RJK6052DPP-M0 Silicon N Channel MOS FET High Speed Power Switching REJ03G1799-0100 Rev.1.00 Jul 02, 2009 Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code PRSS0003AF-A) (Package name TO-220FL) D 1. Gate 2. Drain G 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ra

Preliminary Datasheet RJK6035DPP-E0 R07DS0616EJ0100 600V - 6A - MOS FET Rev.1.00 High Speed Power Switching Feb 24, 2012 Features Low on-resistance RDS(on) = 1.1 typ. (at ID = 3 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AG-A (Package name TO-220FP) D 1. Gate 2. Drain G 3. Source 1 S

Preliminary Datasheet RJK6018DPM R07DS0131EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Sep 09, 2010 Features Low on-resistance RDS(on) = 0.2 typ. (at ID = 15 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003ZA-A (Package name TO-3PFM) D 1. Gate 2. Drain G 3. Source S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK6024DPE R07DS0424EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Jun 06, 2011 Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Sourc

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK6018DPK R07DS0495EJ0200 (Previous REJ03G1537-0100) 600 V - 30 A - MOS FET Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low on-resistance RDS(on) = 0.2 typ. (at ID = 15 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate 2.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK6006DPD REJ03G1935-0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Jun 01, 2010 Features Low on-state resistance RDS(on) = 1.4 typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25 C) High speed switching Outline RENESAS Package code PRSS0004ZG-A D (Package name MP-3A) 4 1. Gate 2. Drain G 3. Source 1 2 4. Drain 3

Preliminary Datasheet RJK6013DPP-E0 R07DS0612EJ0100 600V - 11A - MOS FET Rev.1.00 High Speed Power Switching Feb 20, 2012 Features Low on-resistance RDS(on) = 0.58 typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AG-A (Package name TO-220FP) D 1. Gate 2. Drain G 3. Source

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK6024DP3-A0 R07DS1106EJ0100 600 V - 0.4 A - MOS FET Rev.1.00 High Speed Power Switching Aug 23, 2013 Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSP0004ZB-A (Package name SOT-223) D 4 1. Gate 2. Drain G 3 3. Sourc

Preliminary Datasheet RJK6012DPE R07DS0445EJ0300 (Previous REJ03G1481-0200) Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching Jun 17, 2011 Features Low on-resistance RDS(on) = 0.77 typ. (at ID = 5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) ) D

Preliminary Datasheet RJK6036DP3-A0 R07DS0841EJ0100 600V - 2A - MOS FET Rev.1.00 High Speed Power Switching Jul 05, 2011 Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25 C) Low drive current High density mounting Outline RENESAS Package code PRSP0004ZB-A Package name SOT-223 D 4 1. Gate 2. Drain G 3 3. Source 2 4.

Preliminary Datasheet RJK6024DPD REJ03G1936-0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Jun 01, 2010 Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25 C) Low drive current High density mounting Outline RENESAS Package code PRSS0004ZG-A D (Package name MP-3A) 4 1. Gate 2. Drain G 3. Source

Preliminary Datasheet RJK6002DPE R07DS0214EJ0100 600V - 2A - MOS FET Rev.1.00 High Speed Power Switching Jun 21, 2012 Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25 C) Low drive current High density mounting Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source G 4.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK6025DPD R07DS0676EJ0100 600V - 1A - MOS FET Rev.1.00 High Speed Power Switching Feb 17, 2012 Features Low on-resistance RDS(on) = 13.5 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25 C) Low drive current High density mounting Outline RENESAS Package code PRSS0004ZG-A D (Package name MP-3A) 4 1. Gate 2. Drain G 3. Source 1 2

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK6025DPH-E0 R07DS1012EJ0100 600V - 1A - MOS FET Rev.1.00 High Speed Power Switching Feb 12, 2013 Features Low on-resistance RDS(on) = 13 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25 C) Low drive current High density mounting Outline RENESAS Package code PRSS0004ZJ-B (Package name TO-251) D 4 1. Gate 2. Drain G 3. Source 4. D

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK6002DJE R07DS0845EJ0100 600V - 2A - MOS FET Rev.1.00 High Speed Power Switching Jul 05, 2011 Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003DC-A (Package name TO-92 Mod) D 1. Source G 2. Drain 3. Gate S 3 2 1

Preliminary Datasheet RJK60S5DPK-M0 R07DS0245EJ0400 600V - 20A - SJ MOS FET Rev.4.00 High Speed Power Switching Apr 23, 2012 Features Superjunction MOSFET Low on-resistance RDS(on) = 0.150 typ. (at ID = 10 A, VGS = 10 V, Ta = 25 C) High speed switching tf = 23 ns typ. (at ID = 10 A, VGS = 10 V, RL = 30 , Rg = 10 , Ta = 25 C) Outline RENESAS Package

Preliminary Datasheet RJK6034DPD-E0 R07DS0553EJ0100 600 V - 1 A - MOS FET Rev.1.00 High Speed Power Switching Oct 13, 2011 Features Low on-resistance RDS(on) = 9.8 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004ZJ-A D (Package name TO-252) 4 1. Gate 2. Drain G 3. Source

Preliminary Datasheet RJK6032DPH-E0 R07DS0993EJ0100 600V - 3A - MOS FET Rev.1.00 High Speed Power Switching Jan 23, 2013 Features Low on-resistance RDS(on) = 3.3 typ. (at ID = 1.0 A, VGS = 10 V, Ta = 25 C) Low drive current High density mounting Outline RENESAS Package code PRSS0004ZJ-B (Package name TO-251) D 4 1. Gate 2. Drain G 3. Source 4.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK6002DPH-E0 R07DS1047EJ0100 600V - 2A - MOS FET Rev.1.00 High Speed Power Switching Mar 21, 2013 Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004ZJ-B (Package name TO-251) D 4 1. Gate 2. Drain G 3. Source 4. D

Preliminary RJK6066DPP-M0 Silicon N Channel MOS FET High Speed Power Switching REJ03G1802-0100 Rev.1.00 Jul 02, 2009 Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code PRSS0003AF-A) (Package name TO-220FL) D 1. Gate 2. Drain G 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ra

Preliminary Datasheet RJK6029DJA REJ03G1895-0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Jun 18, 2010 Features Low on-resistance RDS(on) = 13.5 typ. (at ID = 0.1 A, VGS = 10 V, Ta = 25 C) Low drive current High density mounting Outline RENESAS Package code PRSS0003DA-A (Package name TO-92(1)) D 1. Source 2. Drain 3. Gate G

Preliminary Datasheet RJK60S5DPK-M0 R07DS0245EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Jan 19, 2011 Features Low on-resistance RDS(on) = 0.150 typ. (at ID = 10 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004ZH-A (Package name TO-3PSG) D 1. Gate 2. Drain (Flange) G 3

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

isc N-Channel MOSFET Transistor RJK6015DPK FEATURES Drain Current I = 21A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.36 (Max) DS(on) Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low on-resistance Low leakage current High speed switching

isc N-Channel MOSFET Transistor RJK6014DPK FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-