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RJL5014DPK MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: RJL5014DPK

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 150 W

Предельно допустимое напряжение сток-исток (Uds): 500 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Максимально допустимый постоянный ток стока (Id): 19 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 43 nC

Время нарастания (tr): 27 ns

Выходная емкость (Cd): 190 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.4 Ohm

Тип корпуса: TO3P

Аналог (замена) для RJL5014DPK

 

RJL5014DPK Datasheet (PDF)

1.1. r07ds0436ej rjl5014dpk.pdf Size:84K _renesas

RJL5014DPK
RJL5014DPK

Preliminary Datasheet RJL5014DPK R07DS0436EJ0200 (Previous: REJ03G1798-0100) Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Jun 14, 2011 Features ? Built-in fast recovery diode ? Low on-resistance RDS(on) = 0.32 ? typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 ?C) ? Low leakage current ? High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package n

1.2. rjl5014dpp.pdf Size:210K _renesas

RJL5014DPK
RJL5014DPK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 4.1. r07ds0419ej rjl5012dpp.pdf Size:99K _renesas

RJL5014DPK
RJL5014DPK

Preliminary Datasheet RJL5012DPP-M0 R07DS0419EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 26, 2011 Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.56 ? typ. (at ID = 6 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D 1. Gate 2

4.2. rej03g1912 rjl5015dpkds.pdf Size:77K _renesas

RJL5014DPK
RJL5014DPK

Preliminary Datasheet RJL5015DPK REJ03G1912-0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 27, 2010 Features ? Built-in fast recovery diode ? Low on-resistance RDS(on) = 0.23 ? typ. (at ID = 11 A, VGS = 10 V, Ta = 25?C) ? Low leakage current ? High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D 1. Gate 2. Drai

 4.3. r07ds0359ej rjl5013dpe.pdf Size:101K _renesas

RJL5014DPK
RJL5014DPK

Preliminary Datasheet RJL5013DPE R07DS0359EJ0200 (Previous: REJ03G1755-0100) Silicon N Channel MOS FET Rev.2.00 Apr 18, 2011 High Speed Power Switching Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.42 ? typ. (at ID = 7 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-B (Package name

4.4. rjl5012dpp-m0.pdf Size:93K _renesas

RJL5014DPK
RJL5014DPK

 Preliminary Datasheet RJL5012DPP-M0 R07DS0419EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 26, 2011 Features • Built-in fast recovery diode • Low on-resistance RDS(on) = 0.56 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL)

 4.5. rjl5013dpp.pdf Size:181K _renesas

RJL5014DPK
RJL5014DPK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.6. rej03g1817 rjl5018dpkds.pdf Size:181K _renesas

RJL5014DPK
RJL5014DPK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.7. rjl5012dpp.pdf Size:204K _renesas

RJL5014DPK
RJL5014DPK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.8. r07ds0435ej rjl5012dpe.pdf Size:80K _renesas

RJL5014DPK
RJL5014DPK

Preliminary Datasheet RJL5012DPE R07DS0435EJ0200 (Previous: REJ03G1745-0100) Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Jun 14, 2011 Features ? Built-in fast recovery diode ? Low on-resistance RDS(on) = 0.56 ? typ. (at ID = 6 A, VGS = 10 V, Ta = 25 ?C) ? Low leakage current ? High speed switching Outline RENESAS Package code: PRSS0004AE-B (Package nam

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