RJL6012DPE datasheet, аналоги, основные параметры
Наименование производителя: RJL6012DPE
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 100 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 105 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.1 Ohm
Тип корпуса: LDPAK
Аналог (замена) для RJL6012DPE
- подборⓘ MOSFET транзистора по параметрам
RJL6012DPE даташит
rej03g1750 rjl6012dpeds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rjl6012dpp.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
r07ds0437ej rjl6013dpe.pdf
Preliminary Datasheet RJL6013DPE R07DS0437EJ0200 (Previous REJ03G1748-0100) Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Jun 16, 2011 Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.66 typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE
rej03g1819 rjl6018dpkds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Другие IGBT... RJL5012DPE, RJL5012DPP-M0, RJL5013DPE, RJL5014DPK, RJL5015DPK, RJL5018DPK, RJL5020DPK, RJL5032DPP-M0, IRF640N, RJL6013DPE, RJL6015DPK, RJL6018DPK, RJL6020DPK, RJL6032DPP-M0, RJM0306JSP, RQJ0201UGDQA, RQJ0202VGDQA
History: SFF2N60-KR
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Список транзисторов
Обновления
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