Справочник MOSFET. RJL6032DPP-M0

 

RJL6032DPP-M0 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: RJL6032DPP-M0

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 30.6 W

Предельно допустимое напряжение сток-исток (Uds): 600 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Максимально допустимый постоянный ток стока (Id): 2 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 13 ns

Выходная емкость (Cd): 35 pf

Сопротивление сток-исток открытого транзистора (Rds): 3.7 Ohm

Тип корпуса: TO220FL

Аналог (замена) для RJL6032DPP-M0

 

 

RJL6032DPP-M0 Datasheet (PDF)

1.1. r07ds0250ej rjl6032dpp.pdf Size:78K _renesas

RJL6032DPP-M0
RJL6032DPP-M0

Preliminary Datasheet RJL6032DPP-M0 R07DS0250EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Jan 27, 2010 Features ? Low on-state resistance RDS(on) = 3.3 ? typ. (at ID = 1 A, VGS = 10 V, Ta = 25?C) ? High speed switching ? Built in fast recovery diode Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D 1. Gate 2. Drain G 3. Sour

5.1. rjl6014dpp.pdf Size:176K _update_mosfet

RJL6032DPP-M0
RJL6032DPP-M0

 Preliminary Datasheet RJL6014DPP R07DS0262EJ0200 (Previous: REJ03G1853-0100) Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Mar 01, 2011 Features  Built-in fast recovery diode trr = 180 ns typ. (at IF = 15 A, VGS = 0, diF/dt = 100 A/s, Ta = 25 C)  Low on-resistance RDS(on) = 0.52  typ. (at ID = 7.5 A, VGS = 10 V, Ta = 25 C)  Low leakage

5.2. rej03g1750 rjl6012dpeds.pdf Size:179K _renesas

RJL6032DPP-M0
RJL6032DPP-M0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 5.3. rej03g1618 rjl6020dpkds.pdf Size:225K _renesas

RJL6032DPP-M0
RJL6032DPP-M0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.4. rjl6012dpp.pdf Size:179K _renesas

RJL6032DPP-M0
RJL6032DPP-M0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.5. rej03g1819 rjl6018dpkds.pdf Size:181K _renesas

RJL6032DPP-M0
RJL6032DPP-M0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.6. r07ds0437ej rjl6013dpe.pdf Size:81K _renesas

RJL6032DPP-M0
RJL6032DPP-M0

Preliminary Datasheet RJL6013DPE R07DS0437EJ0200 (Previous: REJ03G1748-0100) Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Jun 16, 2011 Features ? Built-in fast recovery diode ? Low on-resistance RDS(on) = 0.66 ? typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25?C) ? Low leakage current ? High speed switching Outline RENESAS Package code: PRSS0004AE-B (Package na

5.7. rej03g1818 rjl6015dpkds.pdf Size:181K _renesas

RJL6032DPP-M0
RJL6032DPP-M0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.8. rjl6013dpp.pdf Size:198K _renesas

RJL6032DPP-M0
RJL6032DPP-M0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Другие MOSFET... RJL5018DPK , RJL5020DPK , RJL5032DPP-M0 , RJL6012DPE , RJL6013DPE , RJL6015DPK , RJL6018DPK , RJL6020DPK , RFP50N06 , RJM0306JSP , RQJ0201UGDQA , RQJ0202VGDQA , RQJ0203WGDQA , RQJ0204XGDQA , RQJ0301HGDQS , RQJ0302NGDQA , RQJ0303PGDQA .

 

 
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