RQJ0201UGDQA - параметры транзистора MOSFET, его аналоги, datasheet

RQJ0201UGDQA Datasheet (PDF)

4.1. Size:85K renesas
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Preliminary Datasheet RQJ0201UGDQA R07DS0290EJ0400(Previous: REJ03G1317-0300)Silicon P Channel MOS FET Rev.4.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 53 m typ (VGS = 4.5 V, ID = 1.8 A) Low drive current High speed switching 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3D3

8.1. Size:86K renesas
r07ds0293ej rqj0204xgd.pdf pdf_icon

Preliminary Datasheet RQJ0204XGDQA R07DS0293EJ0400(Previous: REJ03G1320-0300)Silicon P Channel MOS FET Rev.4.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 219 m typ (VGS = 4.5 V, ID = 0.8 A) Low drive current High speed switching 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3D3

8.2. Size:85K renesas
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Preliminary Datasheet RQJ0203WGDQA R07DS0292EJ0400(Previous: REJ03G1319-0300)Silicon P Channel MOS FET Rev.4.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 142 m typ (VGS = 4.5 V, ID = 1.1 A) Low drive current High speed switching 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3D3

8.3. Size:85K renesas
r07ds0291ej rqj0202vgd.pdf pdf_icon

Preliminary Datasheet RQJ0202VGDQA R07DS0291EJ0400(Previous: REJ03G1318-0300)Silicon P Channel MOS FET Rev.4.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 83 m typ (VGS = 4.5 V, ID = 1.4 A) Low drive current High speed switching 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3DG

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