RQJ0301HGDQS datasheet, подбор замены

 0.1. Size:103K  renesas
 rej03g1265 rqj0301hgdqsds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:82K  renesas
 r07ds0294ej rqj0302ngd.pdf 

Preliminary Datasheet RQJ0302NGDQA R07DS0294EJ0500 (Previous REJ03G1271-0400) Silicon P Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 138 m typ (VGS = 10 V, ID = 1.1 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3

 8.2. Size:129K  renesas
 rej03g1780 rqj0306fqdqsds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:126K  renesas
 rej03g1779 rqj0305eqdqsds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:125K  renesas
 r07ds0297ej rqj0305eqd.pdf 

Preliminary Datasheet RQJ0305EQDQA R07DS0297EJ0200 (Previous REJ03G1718-0100) Silicon P Channel MOS FET Rev.2.00 Power Switching Mar 28, 2011 Features Low gate drive VDSS 30 V and 2.5 V gate drive Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3 2

 8.5. Size:109K  renesas
 r07ds0296ej rqj0304dqd.pdf 

Preliminary Datasheet RQJ0304DQDQA R07DS0296EJ0200 (Previous REJ03G1717-0100) Silicon P Channel MOS FET Rev.2.00 Power Switching Mar 28, 2011 Features Low gate drive VDSS 30 V and 2.5 V gate drive Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3 2

 8.6. Size:128K  renesas
 rej03g1778 rqj0304dqdqsds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.7. Size:110K  renesas
 r07ds0298ej rqj0306fqd.pdf 

Preliminary Datasheet RQJ0306FQDQA R07DS0298EJ0200 (Previous REJ03G1719-0100) Silicon P Channel MOS FET Rev.2.00 Power Switching Mar 28, 2011 Features Low gate drive VDSS 30 V and 2.5 V gate drive Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3 2

 8.8. Size:98K  renesas
 r07ds0295ej rqj0303pgd.pdf 

Preliminary Datasheet RQJ0303PGDQA R07DS0295EJ0500 (Previous REJ03G1272-0400) Silicon P Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 54 m typ (VGS = 10 V, ID = 1.6 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3 G