Справочник MOSFET. RQJ0301HGDQS

 

RQJ0301HGDQS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RQJ0301HGDQS
   Маркировка: HG
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 18 nC
   trⓘ - Время нарастания: 41 ns
   Cossⓘ - Выходная емкость: 153 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.048 Ohm
   Тип корпуса: UPAK SC62

 Аналог (замена) для RQJ0301HGDQS

 

 

RQJ0301HGDQS Datasheet (PDF)

 0.1. Size:103K  renesas
rej03g1265 rqj0301hgdqsds.pdf

RQJ0301HGDQS
RQJ0301HGDQS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:82K  renesas
r07ds0294ej rqj0302ngd.pdf

RQJ0301HGDQS
RQJ0301HGDQS

Preliminary Datasheet RQJ0302NGDQA R07DS0294EJ0500(Previous: REJ03G1271-0400)Silicon P Channel MOS FET Rev.5.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 138 m typ (VGS = 10 V, ID = 1.1 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3D3

 8.2. Size:129K  renesas
rej03g1780 rqj0306fqdqsds.pdf

RQJ0301HGDQS
RQJ0301HGDQS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:126K  renesas
rej03g1779 rqj0305eqdqsds.pdf

RQJ0301HGDQS
RQJ0301HGDQS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:125K  renesas
r07ds0297ej rqj0305eqd.pdf

RQJ0301HGDQS
RQJ0301HGDQS

Preliminary Datasheet RQJ0305EQDQA R07DS0297EJ0200(Previous: REJ03G1718-0100)Silicon P Channel MOS FET Rev.2.00Power Switching Mar 28, 2011Features Low gate drive VDSS : 30 V and 2.5 V gate drive Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK) 3D32

 8.5. Size:109K  renesas
r07ds0296ej rqj0304dqd.pdf

RQJ0301HGDQS
RQJ0301HGDQS

Preliminary Datasheet RQJ0304DQDQA R07DS0296EJ0200(Previous: REJ03G1717-0100)Silicon P Channel MOS FET Rev.2.00Power Switching Mar 28, 2011Features Low gate drive VDSS : 30 V and 2.5 V gate drive Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK) 3D32

 8.6. Size:128K  renesas
rej03g1778 rqj0304dqdqsds.pdf

RQJ0301HGDQS
RQJ0301HGDQS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.7. Size:110K  renesas
r07ds0298ej rqj0306fqd.pdf

RQJ0301HGDQS
RQJ0301HGDQS

Preliminary Datasheet RQJ0306FQDQA R07DS0298EJ0200(Previous: REJ03G1719-0100)Silicon P Channel MOS FET Rev.2.00Power Switching Mar 28, 2011Features Low gate drive VDSS : 30 V and 2.5 V gate drive Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK) 3D32

 8.8. Size:98K  renesas
r07ds0295ej rqj0303pgd.pdf

RQJ0301HGDQS
RQJ0301HGDQS

Preliminary Datasheet RQJ0303PGDQA R07DS0295EJ0500(Previous: REJ03G1272-0400)Silicon P Channel MOS FET Rev.5.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 54 m typ (VGS = 10 V, ID = 1.6 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3D3G

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