RQK0604IGDQA - описание и поиск аналогов

Preliminary Datasheet RQK0604IGDQA R07DS0308EJ0200 (Previous REJ03G1496-0100) Silicon N Channel MOS FET Rev.2.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 111 m typ.(at VGS = 4.5 V, ID = 1 A) Low drive current High speed switching VDSS 60 V and capable of 2.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Packa

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RQK0603CGDQA R07DS0307EJ0500 (Previous REJ03G1277-0400) Silicon N Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 212 m typ (VGS = 10 V, ID = 1 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3 G 1. Sou

Preliminary Datasheet RQK0606KGDQA R07DS0310EJ0200 (Previous REJ03G1497-0100) Silicon N Channel MOS FET Rev.2.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 173 m typ.(at VGS = 4.5 V, ID = 0.8 A) Low drive current High speed switching VDSS 60 V and capable of 2.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Pac

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RQK0605JGDQA R07DS0309EJ0500 (Previous REJ03G1278-0400) Silicon N Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 82 m typ (VGS = 10 V, ID = 1.5 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3 G 1. S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.