Справочник MOSFET. RQK0606KGDQA

 

RQK0606KGDQA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: RQK0606KGDQA

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 0.8 W

Предельно допустимое напряжение сток-исток (Uds): 60 V

Максимально допустимый постоянный ток стока (Id): 1.5 A

Сопротивление сток-исток открытого транзистора (Rds): 0.173 Ohm

Тип корпуса: MPAK

Аналог (замена) для RQK0606KGDQA

 

 

RQK0606KGDQA Datasheet (PDF)

1.1. r07ds0310ej rqk0606kgd.pdf Size:111K _renesas

RQK0606KGDQA
RQK0606KGDQA

Preliminary Datasheet RQK0606KGDQA R07DS0310EJ0200 (Previous: REJ03G1497-0100) Silicon N Channel MOS FET Rev.2.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 173 m? typ.(at VGS = 4.5 V, ID = 0.8 A) Low drive current High speed switching VDSS ? 60 V and capable of 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPA

4.1. rej03g0575 rqk0601agdqsds.pdf Size:104K _renesas

RQK0606KGDQA
RQK0606KGDQA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.2. rej03g1622 rqk0609cqdqsds.pdf Size:132K _renesas

RQK0606KGDQA
RQK0606KGDQA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 4.3. r07ds0308ej rqk0604igd.pdf Size:110K _renesas

RQK0606KGDQA
RQK0606KGDQA

Preliminary Datasheet RQK0604IGDQA R07DS0308EJ0200 (Previous: REJ03G1496-0100) Silicon N Channel MOS FET Rev.2.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 111 m? typ.(at VGS = 4.5 V, ID = 1 A) Low drive current High speed switching VDSS ? 60 V and capable of 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)

4.4. rej03g1621 rqk0608bqdqsds.pdf Size:133K _renesas

RQK0606KGDQA
RQK0606KGDQA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 4.5. r07ds0309ej rqk0605jgd.pdf Size:84K _renesas

RQK0606KGDQA
RQK0606KGDQA

Preliminary Datasheet RQK0605JGDQA R07DS0309EJ0500 (Previous: REJ03G1278-0400) Silicon N Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features ? Low on-resistance RDS(on) = 82 m? typ (VGS = 10 V, ID = 1.5 A) ? Low drive current ? High speed switching ? 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 G 1. Source 2 2. G

4.6. rej03g1620 rqk0607aqdqsds.pdf Size:134K _renesas

RQK0606KGDQA
RQK0606KGDQA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.7. rej03g0577 rqk0603cgdqsds.pdf Size:104K _renesas

RQK0606KGDQA
RQK0606KGDQA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.8. r07ds0307ej rqk0603cgd.pdf Size:103K _renesas

RQK0606KGDQA
RQK0606KGDQA

Preliminary Datasheet RQK0603CGDQA R07DS0307EJ0500 (Previous: REJ03G1277-0400) Silicon N Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 212 m? typ (VGS = 10 V, ID = 1 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 G 1. Source 2 2. Ga

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Список транзисторов

Обновления

MOSFET: BUK637-400B | BUK437-500A | CMI80N06 | CMB80N06 | CMP80N06 | MTY30N50E | 2SK3262-01MR | VN88AF | TK290P60Y | SW069R10VS | SUP70040E | SUD25N15-52-E3 | STP30NF10FP | SKS10N20 | SiHA11N80E |
 

 

 

 

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