Справочник MOSFET. HAT1131R

 

HAT1131R MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HAT1131R
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9 A
   Qgⓘ - Общий заряд затвора: 17 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.019 Ohm
   Тип корпуса: SOP8

 Аналог (замена) для HAT1131R

 

 

HAT1131R Datasheet (PDF)

 ..1. Size:791K  1
hat1131r hat1132r.pdf

HAT1131R

 8.1. Size:98K  renesas
rej03g1244 hat1139h.pdf

HAT1131R
HAT1131R

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.1. Size:163K  renesas
rej03g0446 hat1111c.pdf

HAT1131R
HAT1131R

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.2. Size:97K  renesas
rej03g1234 hat1108c.pdf

HAT1131R
HAT1131R

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.3. Size:100K  renesas
rej03g1330 hat1127hds.pdf

HAT1131R
HAT1131R

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.4. Size:81K  renesas
hat1128r.pdf

HAT1131R
HAT1131R

HAT1128R Silicon P Channel Power MOS FET High Speed Power Switching Rev.3.00 Feb.17.2004 Features Low on-resistance Capable of 4.5 V gate drive High density mounting Outline SOP-856784325 6 7 8 1D D D D4G1, 2, 3 Source4 Gate5, 6, 7, 8 DrainS S S1 2 3Rev.3.00, Feb.17.2005, page 1 of 8 HAT1128R Absolute Maximum Ratings (Ta =

 9.5. Size:131K  renesas
rej03g0406 hat1126rrj.pdf

HAT1131R
HAT1131R

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.6. Size:232K  renesas
rej03g0416 hat1110r.pdf

HAT1131R
HAT1131R

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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